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參數(shù)資料
| 型號： | SD175SC200C |
| 廠商： | SENSITRON SEMICONDUCTOR |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Ultra Fast Trr < 24 nsec SILICON SCHOTTKY RECTIFIER DIE Very Low Forward Voltage Drop |
| 中文描述： | 30 A, SILICON, RECTIFIER DIODE |
| 封裝： | DIE-2 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 70K |
| 代理商： | SD175SC200C |
SENSITRON
Technical Data
Data Sheet 4937, Rev.-
SEMICONDUCTOR
221 West Industry Court
3
Deer Park, NY 11729-4681
3
(631) 586-7600 FAX (631) 242-9798
World Wide Web Site - http://www.sensitron.com
E-Mail Address - sales@sensitron.com
SD175SC200A/B/C
Ultra Fast T
rr
< 24 nsec
SILICON SCHOTTKY RECTIFIER DIE
Very Low Forward Voltage Drop
Applications:
·
Switching Power Supply
·
Converters
·
Free-Wheeling Diodes
·
Polarity Protection Diode
Features:
Soft Reverse Recovery at Low and High Temperature
Very Low Forward Voltage Drop
Low Reverse Leakage Current
Low Power Loss, High Efficiency
High Surge Capacity
Guard Ring for Enhanced Durability and Long Term Reliability
Guaranteed Reverse Avalanche Characteristics
Electrically / Mechanically Stable during and after Packaging
Maximum Ratings:
Characteristics
Symbol
Peak Inverse Voltage
V
RWM
Max. Average Forward Current
I
F(AV)
50% duty cycle, rectangular
wave form
Max. Peak One Cycle Non-
Repetitive Surge Current
Non-Repetitive Avalanche
Energy
L = 40mH
Repetitive Avalanche Current
I
AR
I
AS
decay linearly to 0 in 1
μ
s
limited by T
J
max V
A
=1.5V
R
Max. Junction Temperature
T
J
Max. Storage Temperature
T
stg
Electrical Characteristics
(1)
:
Characteristics
Symbol
Max. Forward Voltage Drop
V
F1
@ 30A, Pulse, T
J
= 25
°
C
V
F2
@ 30A, Pulse, T
J
= 125
°
C
Max. Reverse Current
I
R1
@V
R
= 200V, Pulse,
T
J
= 25
°
C
I
R2
@V
R
= 200V, Pulse,
T
J
= 125
°
C
Max. Junction Capacitance
C
T
@V
R
= 5V, T
C
= 25
°
C
f
SIG
= 1MHz,
V
SIG
= 50mV (p-p)
Max. Reverse Recovery Time
t
rr
I
F
= 0.5 A, I
R
= 1.0 A,
I
RM
= 0.25 A, T
J
= 25
°
C
(1) in SHD package
Condition
-
Max.
200
30
Units
V
A
I
FSM
8.3 ms, half Sine wave
(1)
570
A
E
AS
T
J
= 25
°
C, I
AS
= 0.75 A,
16
mJ
0.75
A
-
-
-65 to +200
-65 to +200
°
C
°
C
Condition
Max.
0.92
0.76
700
Units
V
V
μ
A
16
mA
600
pF
24
nsec
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