參數(shù)資料
型號： SD210DE
廠商： LINEAR INTEGRATED SYSTEMS INC
元件分類： 小信號晶體管
英文描述： HIGH SPEED DMOS FET ANALOG SWITCHES AND SWITCH ARRAYS
中文描述： 50 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-206AF
封裝： ROHS COMPLIANT, METAL, TO-72, 3 PIN
文件頁數(shù)： 2/2頁
文件大小： 29K
代理商： SD210DE
ABSOLUTE MAXIMUM RATINGS
Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Total Device Dissipation at 25
o
C Case Temperature . . . 1.2W
Storage Temperatue Range . . . . . . . . . . . . . -65
o
C to +200
o
C
Lead Temperature (1/16" from case for 10 sec.). . . . . . 300
o
C
Operating Temperature Range . . . . . . . . . . . -55
o
C to +125
o
C
SD210 /SD212 /SD214
C ORPORATION
PARAMETER
Drain-to-Source
Source-to-Drain
Drain-to-Body
Source-to-Body
Gate-to-Source
Gate-to-Body
Gate-to-Drain
SD210
+30
+10
+30
+15
±
40
±
40
±
40
SD212
+10
+10
+15
+15
±
40
±
40
±
40
SD214
+20
+20
+25
+25
±
40
±
40
±
40
UNIT
V
dc
V
dc
V
dc
V
dc
V
dc
V
dc
V
dc
V
DS
V
SD
V
DB
V
SB
V
GS
V
GB
V
GD
DC CHARACTERISTICS
(T
A
= 25
o
C, unless otherwise specified)
SYMBOL
PARAMETER
SD210
SD212
SD214
UNITS
TEST CONDITIONS
MIN
TYP MAX MIN
TYP MAX MIN
TYP MAX
BREAKDOWN VOLTAGE
BV
DS
Drain-to-Source
30
35
V
V
GS
= V
BS
= 0V, I
D
= 10
μ
A
10
25
10
25
20
25
V
GS
= V
BS
= -5V, I
S
= 10nA
BV
SD
Source-to Drain
10
10
20
V
GD
= V
BD
= -5V, I
D
= 10nA
BV
DB
Drain-to-Body
15
15
25
V
GB
= 0V, source OPEN, I
D
= 10nA
BV
SB
Source-to-Body
15
15
25
V
GB
= 0V, drain OPEN, I
S
= 10
μ
A
LEAKAGE CURRENT
I
DS
(OFF)
Drain-to-Source
1
10
1
10
nA
V
GS
= V
BS
= -5V, V
DS
= +10V
1
10
V
GS
= V
BS
= -5V, V
DS
= +20V
I
SD
(OFF)
Source-to-Drain
1
10
1
10
V
GS
= V
BD
= -5V, V
SD
= +10V
1
10
V
GS
= V
BD
= -5V, V
SD
= +20V
I
GBS
Gate
0.1
0.1
0.1
V
DB
= V
SB
= 0V, V
GS
=
±
40V
V
T
Threshold Voltage
0.5
1.0
2.0
0.1
1.0
2.0
0.1
1.0
2.0
V
V
DS
= V
GS
= V
T
, I
S
= 1
μ
A, V
SB
= 0V
r
DS
(ON)
Drain-to-Source
Resistance
50
70
50
70
50
70
I
D
= 1.0mA, V
SB
= 0, V
GS
= +5V
30
45
30
45
30
45
I
D
= 1.0mA, V
SB
= 0, V
GS
= +10V
23
23
23
I
D
= 1.0mA, V
SB
= 0, V
GS
= +15V
19
19
19
I
D
= 1.0mA, V
SB
= 0, V
GS
= +20V
17
17
17
I
D
= 1.0mA, V
SB
= 0, V
GS
= +25V
AC ELECTRICAL CHARACTERISTICS
SYMBOL
PARAMETER
SD210
SD212
SD214
UNITS
TEST CONDITIONS
MIN
TYP MAX MIN
TYP MAX MIN
TYP MAX
gfs
Forward
Transconductance
10
15
10
15
10
15
ms
V
DS
= 10V, V
SB
= 0V,
I
D
= 20mA, f = 1kHz
SMALL SIGNAL CAPACITANCES
C
(GS+GD+GB)
Gate Node
2.4
3.5
2.4
3.5
2.4
3.5
pF
V
DS
= 10V, f = 1MHz
V
GS
= V
BS
= -15V
C
(GD+DB)
Drain Node
1.3
1.5
1.3
1.5
1.3
1.5
C
(GS+SB)
Source Node
3.5
5.5
3.5
5.5
3.5
5.5
C
DG
Reverse Transfer
0.3
0.5
0.3
0.5
0.3
0.5
Information furnished by Calogic is believed to be accurate and reliable. However, no responsibility is assumed for its use: nor for any infringement of patents or other
rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent rights of Calogic.
CALOGIC CORPORATION,
237 Whitney Place, Fremont, California 94539, Telephone: 510-656-2900, FAX: 510-651-3025
相關PDF資料
PDF描述
SD214DE DELAY LINE 0.5NS +-50PS 16SOIC
SD210DET N-CHANNEL LATERAL DMOS JFET SWITCH TYPICAL CHARACTERISTICS
SD211 High-Speed Analo N-Channel DMOS FETs
SD215DE High-Speed Analo N-Channel DMOS FETs
SD213DE DELAY LINE 3.5NS +-50PS 16SOIC
相關代理商/技術參數(shù)
參數(shù)描述
SD210DE-2 制造商:Vishay Angstrohm 功能描述:Trans MOSFET N-CH 30V 0.05A 4-Pin TO-206AF 制造商:Vishay Siliconix 功能描述:TRANS MOSFET N-CH 30V 0.05A 4PIN TO-206AF - Bulk 制造商:Vishay 功能描述:Trans MOSFET N-CH 30V 0.05A 4-Pin TO-206AF
SD210DE-2L 制造商:Vishay Semiconductors 功能描述:SD210DE-2 WITH SOLDER LEADS
SD210DET 制造商:LINEAR 制造商全稱:LINEAR 功能描述:N-CHANNEL LATERAL DMOS JFET SWITCH TYPICAL CHARACTERISTICS
SD210E 制造商:CALOGIC 制造商全稱:CALOGIC 功能描述:High-Speed Analog N-Channel DMOS FETs
SD210EE 制造商:NXP Semiconductors 功能描述:
發(fā)布緊急采購，3分鐘左右您將得到回復。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*