參數(shù)資料
型號： SD211DE
廠商： LINEAR INTEGRATED SYSTEMS INC
元件分類： 小信號晶體管
英文描述： N-CHANNEL LATERAL DMOS SWITCH ZENER PROTECTED
中文描述： 50 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-206AF
封裝： ROHS COMPLIANT, METAL, TO-72, 3 PIN
文件頁數(shù)： 2/2頁
文件大?。?/td> 29K
代理商： SD211DE
ABSOLUTE MAXIMUM RATINGS
Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Total Device Dissipation at 25
o
C Case Temperature . . . 1.2W
Storage Temperatue Range . . . . . . . . . . . . . -65
o
C to +200
o
C
Lead Temperature (1/16" from case for 10 sec.). . . . . . 300
o
C
Operating Temperature Range . . . . . . . . . . . -55
o
C to +125
o
C
SD211 /SD213 /SD215
C ORPORATION
DC CHARACTERISTICS
(T
A
= 25
o
C, unless otherwise specified)
SYMBOL
PARAMETER
SD211
SD213
SD215
UNITS
TEST CONDITIONS
MIN
TYP MAX MIN
TYP MAX MIN
TYP MAX
BREAKDOWN VOLTAGE
BV
DS
Drain-to-Source
30
35
V
V
GS
= V
BS
= 0V, I
D
= 10
μ
A
10
25
10
25
20
25
V
GS
= V
BS
= -5V, I
S
= 10nA
BV
SD
Source-to Drain
10
10
20
V
GD
= V
BD
= -5V, I
D
= 10nA
BV
DB
Drain-to-Body
15
15
25
V
GB
= 0V, source OPEN, I
D
= 10nA
BV
SB
Source-to-Body
15
15
25
V
GB
= 0V, drain OPEN, I
S
= 10
μ
A
LEAKAGE CURRENT
I
DS
(OFF)
Drain-to-Source
1
10
1
10
nA
V
GS
= V
BS
= -5V, V
DS
= +10V
1
10
V
GS
= V
BS
= -5V, V
DS
= +20V
I
SD
(OFF)
Source-to-Drain
1
10
1
10
V
GS
= V
BD
= -5V, V
SD
= +10V
1
10
V
GS
= V
BD
= -5V, V
SD
= +20V
I
GBS
Gate
10
10
10
V
DB
= V
SB
= 0V, V
GS
=
±
40V
V
T
Threshold Voltage
0.5
1.0
2.0
0.1
1.0
2.0
0.1
1.0
2.0
V
V
DS
= V
GS
= V
T
, I
S
= 1
μ
A, V
SB
= 0V
r
DS
(ON)
Drain-to-Source
Resistance
50
70
50
70
50
70
I
D
= 1.0mA, V
SB
= 0, V
GS
= +5V
30
45
30
45
30
45
I
D
= 1.0mA, V
SB
= 0, V
GS
= +10V
23
23
23
I
D
= 1.0mA, V
SB
= 0, V
GS
= +15V
19
19
19
I
D
= 1.0mA, V
SB
= 0, V
GS
= +20V
17
I
D
= 1.0mA, V
SB
= 0, V
GS
= +25V
AC ELECTRICAL CHARACTERISTICS
SYMBOL
PARAMETER
SD211
TYP MAX MIN
SD213
TYP MAX MIN
SD215
TYP MAX
UNITS
TEST CONDITIONS
MIN
gfs
Forward
Transconductance
10
15
10
15
10
15
ms
V
DS
= 10V, V
SB
= 0V,
I
D
= 20mA, f = 1kHz
SMALL SIGNAL CAPACITANCES
C
ISS
Gate Node
2.4
3.5
2.4
3.5
2.4
3.5
pF
V
DS
= 10V, f = 1MHz
V
GS
= V
BS
= -15V
C
OSS
Drain Node
1.3
1.5
1.3
1.5
1.3
1.5
C
RSS
Source Node
0.3
0.5
0.3
0.5
0.3
0.5
Information furnished by Calogic is believed to be accurate and reliable. However, no responsibility is assumed for its use: nor for any infringement of patents or other
rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent rights of Calogic.
CALOGIC CORPORATION,
237 Whitney Place, Fremont, California 94539, Telephone: 510-656-2900, FAX: 510-651-3025
PARAMETER
SD211
+30
SD212
+10
SD215
+20
UNIT
V
dc
V
DS
Drain-to-Source
V
SD
Source-to-Drain
+10
+10
+20
V
dc
V
DB
Drain-to-Body
+30
+15
+25
V
dc
V
SB
Source-to-Body
+15
+15
+25
V
dc
V
GS
Gate-to-Source
-15
+25
-15
+25
-25
+30
V
dc
V
GB
Gate-to-Body
-0.3
+25
-0.3
+25
-0.3
+30
V
dc
V
GD
Gate-to-Drain
-30
+25
-15
+25
-25
+30
V
dc
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