參數(shù)資料
型號： SD314DE
廠商： CALOGIC LLC
元件分類： 小信號晶體管
英文描述： High-Speed Analog N-Channel DMOS FETs Improved On -Resistance
中文描述： 50 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-72
文件頁數(shù)： 2/3頁
文件大小： 35K
代理商： SD314DE
ABSOLUTE MAXIMUM RATINGS
Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Total Device Dissipation at 25
o
C Case Temperature . . . 1.2W
Storage Temperature Range. . . . . . . . . . . . . . -65
o
to +200
o
C
Lead Temperature (1/16" from case for 10 sec.). . . . . . 300
o
C
Operating Temperature Range . . . . . . . . . . . -55
o
C to +125
o
C
PARAMETER
V
DS
V
SD
V
DB
V
SB
V
GS
V
GB
V
GD
SD310
+30
+10
+30
+15
±
40
±
40
±
40
SD312
+10
+10
+15
+15
±
40
±
40
±
40
SD314
+20
+20
+25
+25
±
40
±
40
±
40
UNIT
V
dc
V
dc
V
dc
V
dc
V
dc
V
dc
V
dc
Drain-to-source
Source-to-drain*
Drain-to-body
Source-to-body
Gate-to-source
Gate-to-body
Gate-to-drain
SD310 /SD312 /SD314
C ORPORATION
SYMBOL
PARAMETER
SD310
SD312
SD314
UNITS
TEST CONDITIONS
MIN
TYP MAX MIN
TYP MAX MIN
TYP MAX
BREAKDOWN VOLTAGE
BV
DS
Drain-to-source
30
35
V
V
GS
= V
BS
= 0V, I
D
= 10
μ
A
10
25
10
25
20
25
V
GS
= V
BS
= -5V, I
S
= 10nA
BV
SD
Source-to drain
10
10
20
V
GD
= V
BD
= -5V, I
D
= 10nA
BV
DB
Drain-to-body
15
15
25
V
GB
= 0V, source OPEN, I
D
= 10nA
BV
SB
Source-to-body
15
15
25
V
GB
= 0V, drain OPEN, I
S
= 10
μ
A
LEAKAGE CURRENT
I
DS
(OFF)
Drain-to-source
1
10
1
10
nA
V
GS
= V
BS
= -5V, V
DS
= +10V
1
10
V
GS
= V
BS
= -5V, V
DS
= +20V
I
SD
(OFF)
Source-to-drain
1
10
1
10
V
GS
= V
BD
= -5V, V
SD
= +10V
1
10
V
GS
= V
BD
= -5V, V
SD
= +20V
I
GBS
Gate
0.1
0.1
0.1
V
DB
= V
SB
= 0V, V
GS
=
±
40V
V
T
Threshold voltage
0.5
1.0
2.0
0.5
1.0
2.0
0.5
1.0
2.0
V
V
DS
= V
GS
= V
T
, I
S
= 1
μ
A, V
SB
= 0V
r
DS
(ON)
Drain-to-source
resistance
30
50
30
50
30
50
I
D
= 1.0mA, V
SB
= 0, V
GS
= +5V
20
35
20
35
20
35
I
D
= 1.0mA, V
SB
= 0, V
GS
= +10V
15
25
15
15
I
D
= 1.0mA, V
SB
= 0, V
GS
= +15V
SYMBOL
PARAMETER
SD310
SD312
SD314
UNITS
TEST CONDITIONS
MIN
TYP MAX MIN
TYP MAX MIN
TYP MAX
gfs
Forward
transconductance
15
20
15
20
15
20
mmhos
V
DS
= 10V, V
SB
= 0V, I
D
= 20mA,
f = 1kHz
SMALL SIGNAL CAPACITANCES (See capacitance model)
C
(GS+GD+GB)
Gate node
2.4
3.7
2.4
3.7
2.4
3.7
pF
V
DS
= 10V, f = 1MHz
V
GS
= V
BS
= -15V
C
(GD+DB)
Drain node
1.3
1.7
1.3
1.7
1.3
1.7
C
(GS+SB)
Source node
3.5
4.5
3.5
4.5
3.5
4.5
C
DG
Reverse transfer
0.3
0.7
0.3
0.7
0.3
0.7
AC ELECTRICAL CHARACTERISTICS
DC ELECTRICAL CHARACTERISTICS
(T
A
= 25
o
C, unless other specified.)
相關(guān)PDF資料
PDF描述
SD310 High-Speed Analog N-Channel DMOS FETs Improved On -Resistance
SD310DE High-Speed Analog N-Channel DMOS FETs Improved On -Resistance
SD312 High-Speed Analog N-Channel DMOS FETs Improved On -Resistance
SD314 High-Speed Analog N-Channel DMOS FETs Improved On -Resistance
SD3301HD N CHNNEL ENHANCEMENT MODE D MOS POWER FETS
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