
SD411
C ORPORATION
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25
o
C unless otherwise noted)
V
DS
Drain-Source Voltage. . . . . . . . . . . . . . . . . . . . . . +20V
V
SD
Source-Drain Voltage. . . . . . . . . . . . . . . . . . . . . . +10V
V
DB
Drain-Body voltage. . . . . . . . . . . . . . . . . . . . . . . . +25V
V
SB
Source-Body Voltage . . . . . . . . . . . . . . . . . . . . . . +15V
V
GD
Gate-Drain Voltage. . . . . . . . . . . . . . . . . . . . . . . . +25V
V
GS
Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . +25V
V
GB
Gate-Body Voltage. . . . . . . . . . . . . . . . . . . . . . . . +25V
V
G1G2
Gate-to-Gate Voltage . . . . . . . . . . . . . . . . . . . . . . +25V
V
D1D2
Drain-to-Drain Voltage . . . . . . . . . . . . . . . . . . . . . +20V
V
S1S2
Source-to-Source Voltage . . . . . . . . . . . . . . . . . . +15V
I
D
Continuous Drain Current . . . . . . . . . . . . . . . . +50 mA
P
D
Device Dissipation (each side). . . . . . . . . . . . 360 mW
Derating Factor . . . . . . . . . . . . . . . . . . . . 2.88 mW/
o
C
Total Device Dissipation . . . . . . . . . . . . . . . . 500 mW
Derating Factor . . . . . . . . . . . . . . . . . . . . . . . 4 mW/
o
C
Operating Junction
Temperature Range . . . . . . . . . . . . . . . . -55 to +125
o
C
Storage Temperature Range . . . . . . . . . -55 to +150
o
C
Lead Temperature (1/16’ from mounting
surface for 10 sec.). . . . . . . . . . . . . . . . . . . . . . +260
o
C
P
D
T
j
T
S
T
L
ELECTRICAL CHARACTERISTICS
(T
A
= +25
o
C per side unless otherwise noted)
SYMBOL
CHARACTERISTIC
MIN
TYP
MAX
UNITS
TEST CONDITIONS
STATIC
BV
DS
Drain Source Breakdown Voltage
20
V
I
D
= 10 nA, V
GS
= V
BS
= -5V
BV
SD
Source-Drain Breakdown Voltage
10
I
S
= 10 nA, V
GD
= V
BD
= -5V
BV
DB
Drain-Body Breakdown Voltage
25
I
D
= 10 nA, V
GB
= 0 Source
Open
BV
SB
Source-Body Breakdown Voltage
15
I
S
= 10
μ
A, V
GB
= 0 Drain Open
I
DSX
Drain-Source Leakage Current
0.7
10
nA
V
DS
= 20V, V
GS
= V
BS
= -5V
I
GBS
Gate-Body Leakage Current
1.0
μ
A
V
GS
= 25V, V
DB
= V
SB
= 0
V
GS(th)
Gate-Source Threshold Voltage
0.5
1.0
2.0
V
I
D
= 1.0
μ
A, V
DS
= V
GS
, V
SB
= 0
r
DS(ON)
Drain-Source ON Resistance
(1)
70
ohms
I
D
= 1.0mA, V
GS
= 5.0V, V
SB
= 0
DYNAMIC
g
fs
Common-Source Forward Transconductance
(1)
10
12
mS
V
DS
= 10V, I
D
= 20mA, V
SB
= 0
f = 1KHZ
C
iss
Common-Source Input Capacitance
3.5
pF
V
DS
= 10V, V
GS
= V
BS
= 0
f = 1MHZ
C
oss
Common-Source Output Capacitance
1.2
C
rss
Common Source Reverse Transfer Capacitance
0.3
C
(gs + sb)
Source Node Capacitance
4.5
MATCH
| V
GS1
- V
GS2
|
Differential Gate Source Voltage
25
mV
V
DS
= 10V
I
D
= 5.0mA
V
SB
= 0
| V
GS1
- V
DS2
|
T
Differential Drift
25
μ
V/
o
C
T
A
= -55
o
C to
+125C
o
NOTE 1: Pulse Test, 80sec, 1% Duty Cycle