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參數(shù)資料
| 型號： | SD5300Y |
| 廠商： | CALOGIC LLC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Quad DMOS Analog Switch Driver Improved Performance Over SD5000N and SD5400CY |
| 中文描述： | 50 mA, 20 V, 4 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SOIC-14 |
| 文件頁數(shù)： | 2/3頁 |
| 文件大?。?/td> | 35K |
| 代理商： | SD5300Y |
SD5300
C ORPORATION
ELECTRICAL CHARACTERISTICS
(T
A
= 25
o
C, unless otherwise noted)
SYMBOL
PARAMETER
MIN
TYP
MAX
UNITS
CONDITIONS
BV
DS
Drain-Source Breakdown Voltage
20
25
V
I
D
= 10
μ
A, V
GS
= V
BS
= 0
BV
SB
Source-Substrate Breakdown
Voltage
20
25
I
S
= 10
μ
A, V
GS
= 0, Drain Open
I
GBS
Gate-Body Leakage Current
1.0
μ
A
V
GB
= 25V, V
DB
= V
SB
= 0
V
GS(th)
Gate-Source Threshold Voltage
0.5
2.0
V
V
DS
= V
GS
, I
D
= 1.0
μ
A, V
SB
= 0
r
DS(on)
Drain-Source ON Resistance
40
45
ohms
V
GS
= 5V, I
D
= 1mA, V
SB
= 0
22
25
V
GS
= 10V, I
D
= 1mA, V
SB
= 0
17
20
V
GS
= 15V, I
D
= 1mA, V
SB
= 0
15
17
V
GS
= 20V, I
D
= 1mA, V
SB
= 0
g
fs
Common-Source Forward
Transconductance
10
12
mmhos
V
DS
= 10V, I
D
= 20mA, f = 1KHz, V
SB
= 0
c
(ga+gd+gb)
Gate Node Capacitance
2.4
3.7
pF
f = 1MHz, V
DS
= 10V, V
GS
= V
BS
= -15V
c
(gd+db)
Drain Node Capacitance
1.3
1.7
c
(gs+sb)
Source Node Capacitance
3.5
4.5
c
(dg)
Reverse Transfer Capacitance
0.3
.7
C
T
Cross Talk
-107
dB
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
MAX. VALUE
UNITS
Breakdown Voltage
Drain-Source
Source-Drain
Drain-Substrate
Source-Substrate
Gate-Source
Gate-Substrate
Gate-Drain
V
DS
V
SD
V
DB
V
SB
V
GS
V
GB
V
GD
20
20
25
25
25
25/-.3
25
V
Continuous Drain Current
I
D
50
mA
ABSOLUTE MAXIMUM
PARAMETER
SYMBOL
MAX. VALUE
UNITS
Drain Current
I
D
50
mA
Temperature Range
Operating
Storage
T
J
T
S
-55 to +85
-55 to +150
o
C
Power Dissipation
Package
Each Device
P
D
P
D
640 (Note 1)
300 (Note 2)
mW
Notes:
1. Linear Derating Factor – 10.7mW/
o
C above 25
o
C
2. Linear Derating Factor – 5.0mW/
o
C above 25
o
C
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