參數(shù)資料
型號(hào): SD5501
廠商: CALOGIC LLC
英文描述: N-Channel Depletion-Mode 4-Channel DMOS FET Array
中文描述: N溝道耗盡型4通道的DMOS場(chǎng)效應(yīng)管陣列
文件頁(yè)數(shù): 2/2頁(yè)
文件大?。?/td> 29K
代理商: SD5501
SD5501
C ORPORATION
ABSOLUTE MAXIMUM RATINGS
(T
A
= +25
o
C unless otherwise noted)
V
DS
Drain-Source Voltage. . . . . . . . . . . . . . . . . . . . +30 Vdc
V
SD
Source-Drain Voltage. . . . . . . . . . . . . . . . . . . . +0.5 Vdc
V
DB
Drain-Body Voltage . . . . . . . . . . . . . . . . . . . . . . +30 Vdc
V
SB
Source-Body Voltage. . . . . . . . . . . . . . . . . . . . . +15 Vdc
V
GS
Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . +25 Vdc
V
GB
Gate-Body Voltage. . . . . . . . . . . . . . . . . . . . . . . +25 Vdc
Gate-Body Voltage. . . . . . . . . . . . . . . . . . . . . . -0.3 Vdc
V
GD
Gate-Drain Voltage . . . . . . . . . . . . . . . . . . . . . . +25 Vdc
I
D
Continuous Drain Current . . . . . . . . . . . . . . . . . . 50 mA
P
D
Total Package Power Dissipation
(at or below TA = +25
o
C) . . . . . . . . . . . . . . . . . 640 mW
Linear Derating Factor. . . . . . . . . . . . . . . . 10.7 mW/
o
C
Single Device Power Dissipation
(at or below TA = +25
o
C) . . . . . . . . . . . . . . . . . 300 mW
Linear Derating Factor. . . . . . . . . . . . . . . . . 5.0 mW/
o
C
Operating Junction Temperature Range . . -55 to +85
o
C
Storage Temperature Range . . . . . . . . . -55 to + 150
o
C
P
D
T
j
T
S
ELECTRICAL CHARACTERISTCIS
(T
A
= +25
o
C unless otherwise noted)
SYMBOL
CHARACTERISTIC
MIN
TYP
MAX
UNITS
TEST CONDITIONS
STATIC
B
VDS
Drain-Source Breakdown Voltage
20
V
I
D
= 10 nA, V
GS
= V
BS
= -5.6V
B
VSD
Source-Drain Breakdown Voltage
10
I
S
= 10 nA, V
GD
= V
BD
= -5.6V
B
VDB
Drain-Body Breakdown Voltage
25
I
D
= 10nA, V
GB
= 0, Source Open
B
VSB
Source-Body Breakdown Voltage
15
I
S
= 10
μ
A, V
GB
= 0, Drain Open
I
GSS(fwd)
Forward Gate Leakage Current
1.0
nA
V
GS
= 25V, V
DS
= V
BS
= 0
I
G
Gate Operating Current
-3.0
-100
pA
V
DG
= 15V, I
D
= 5.0 mA,
V
BS
= -5.6V
-0.7
-10
nA
T
A
= +125
o
C
V
GS (off)
Gate - Source Cutoff Voltage
-1.0
-5.0
V
V
DS
= 10V, I
D
= 1.0
μ
A, V
BS
= 5.6V
V
GS (on)
Gate-Source On Voltage
-0.3
-3.0
V
DG
= 10V, I
D
= 5mA, V
SB
= -5.6V
I
DSX
Zero Gate Voltage Drain Current
7.0
40
mA
V
DS
= 10V, V
GS
= 0,
V
BS
= -5.6V
5.0
T
A
= +125
o
C
r
DS (ON)
Drain-Source On Resistance
100
150
ohms
I
D
= 1.0mA, V
GS
= 0, V
BS
= -5.6V
DYNAMIC
g
fs
Common-Source Forward Transconductance
(1)
6.0
7.5
12
mS
V
DG
= 10V
I
D
= 5.0mA
V
BS
= -5.6V
f = 1 KHz
g
os
Common-Source Output Conductance
200
350
μ
S
C
iss
Common-Source Input Capacitance
3.5
pF
f = 1 MHz
C
oss
Common-Source Output Capacitance
1.2
C
rss
Common-Source Reverse Transfer Capacitance
0.3
C
(gs + sb)
Source Node Capacitance
4.5
MATCHING
V
GSM
Gate Source Voltage Match
50
mV
V
DG
= 10V, I
D
= 5.0mA, V
BS
= -5.6V
r
DS(on)
Drain-Source On Resistance Match
10%
I
D
= 1.0 mA, V
GS
= 0, V
BS
= 5.6V
I
DXSM
Zero Gate Voltage Drain Current Match
Transconductance Match
(1), (2)
10%
V
DG
= 10V, I
D
= 5.0 mA,
V
BS
= -5.6V
g
fsm
10%
f = 1 KHz
Note 1: Pulse Test, 80 sec, 1% Duty Cycle
Note 2: Match of 4 channels
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