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參數(shù)資料
| 型號： | SD603C04S10C |
| 廠商： | VISHAY INTERTECHNOLOGY INC |
| 元件分類： | 整流器 |
| 英文描述： | 600 A, 400 V, SILICON, RECTIFIER DIODE |
| 封裝： | ROHS COMPLIANT, CERAMIC, B-43, PUK-2 |
| 文件頁數(shù)： | 4/11頁 |
| 文件大小： | 436K |
| 代理商： | SD603C04S10C |
www.vishay.com
For technical questions, contact: ind-modules@vishay.com
Document Number: 93178
2
Revision: 04-Aug-08
SD603C..C Series
Vishay High Power Products
Fast Recovery Diodes
(Hockey PUK Version), 600 A
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VOLTAGE
CODE
VRRM, MAXIMUM REPETITIVE PEAK
AND OFF-STATE VOLTAGE
V
VRSM, MAXIMUM NON-REPETITIVE
PEAK VOLTAGE
V
IRRM MAXIMUM
AT TJ = 125 °C
mA
SD603C..S10C
04
400
500
45
08
800
900
10
1000
1100
SD603C..S15C
12
1200
1300
14
1400
1500
16
1600
1700
SD603C..S20C
20
2000
2100
22
2200
2300
FORWARD CONDUCTION
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum average forward current
at heatsink temperature
IF(AV)
180° conduction, half sine wave
Double side (single side) cooled
600 (300)
A
55 (75)
°C
Maximum RMS current
IF(RMS)
25 °C heatsink temperature double side cooled
942
A
Maximum peak, one-cycle
non-repetitive forward current
IFSM
t = 10 ms
No voltage
reapplied
Sinusoidal half wave,
initial TJ = TJ maximum
8320
t = 8.3 ms
8715
t = 10 ms
100 % VRRM
reapplied
7000
t = 8.3 ms
7330
Maximum I2t for fusing
I2t
t = 10 ms
No voltage
reapplied
346
kA2s
t = 8.3 ms
316
t = 10 ms
100 % VRRM
reapplied
245
t = 8.3 ms
224
Maximum I2
√t for fusing
I2
√t
t = 0.1 to 10 ms, no voltage reapplied
3460
kA2
√s
Low level value of threshold voltage
VF(TO)1
(16.7 % x
π x I
F(AV) < I < π x IF(AV)), TJ = TJ maximum
1.36
V
High level value of threshold voltage
VF(TO)2
(I >
π x I
F(AV)), TJ = TJ maximum
1.81
Low level of forward slope resistance
rf1
(16.7 % x
π x I
F(AV) < I < π x IF(AV)), TJ = TJ maximum
0.87
m
Ω
High level of forward slope resistance
rf2
(I >
π x I
F(AV)), TJ = TJ maximum
0.67
Maximum forward voltage drop
VFM
Ipk = 1885 A, TJ = 25 °C; tp = 10 ms sinusoidal wave
2.97
V
RECOVERY CHARACTERISTICS
CODE
MAXIMUM VALUE
AT TJ = 25 °C
TEST CONDITIONS
TYPICAL VALUES
AT TJ = 125 °C
trr AT 25 % IRRM
(s)
Ipk
SQUARE
PULSE
(A)
dI/dt
(A/s)
Vr
(V)
trr AT 25 % IRRM
(s)
Qrr
(C)
Irr
(A)
S10
1.0
1000
25
- 30
2.0
45
34
S15
1.5
3.2
87
51
S20
2.0
3.5
97
55
I
FM
t
rr
dir
dt
I
RM(REC)
Q
rr
t
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SD603C04S10C_12 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Fast Recovery Diodes (Hockey PUK Version), 600 A |
| SD603C04S15C | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:SD603C04S10C |
| SD603C04S20C | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:SD603C04S10C |
| SD603C08S10C | 功能描述:DIODE FAST REC 800V 600A E-PUK RoHS:是 類別:半導(dǎo)體模塊 >> 二極管，整流器 系列:- 標(biāo)準(zhǔn)包裝:10 系列:- 電壓 - 在 If 時(shí)為正向 (Vf)（最大）:1.45V @ 30A 電流 - 在 Vr 時(shí)反向漏電:15µA @ 400V 電流 - 平均整流 (Io)（每個(gè)二極管）:30A 電壓 - (Vr)（最大）:400V 反向恢復(fù)時(shí)間(trr):65ns 二極管類型:標(biāo)準(zhǔn) 速度:快速恢復(fù) = 200mA（Io） 二極管配置:2 個(gè)獨(dú)立式 安裝類型:底座安裝 封裝/外殼:ISOTOP 供應(yīng)商設(shè)備封裝:ISOTOP? 包裝:管件 |
| SD603C08S15C | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:SD603C04S10C |
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