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參數(shù)資料
| 型號(hào)： | SDM6912 |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | Dual N-Channel E nhancement Mode F ield E ffect Transistor |
| 中文描述： | 雙N溝道位置nhancement F型爾德首頁(yè)ffect晶體管 |
| 文件頁(yè)數(shù)： | 2/5頁(yè) |
| 文件大?。?/td> | 429K |
| 代理商： | SDM6912 |
SDM6912
Parameter
Symbol
Condition
Min
Typ
Max Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
=
V
GS
0V, I
D
=
30
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
=
GS
0V
=
1
uA
Gate-Body Leakage
I
GSS
V
GS
20V, V
DS
0V
=
nA
ON CHARACTERISTICS
b
Gate Threshold Voltage
V
GS(th)
V
DS
V
GS
, I
D
= 250uA
=
1
1.8
V
Drain-Source On-State Resistance
R
DS(ON)
V
GS
10V, I
D
6.0A
=
V
GS
4.5V,I
D
5.0A
=
On-State Drain Current
I
D(ON)
g
V
DS
= 5V, V
GS
=10V
30
16
A
S
Forward Transconductance
FS
V
DS
5V, I
D
6.0A
=
DYNAMIC CHARACTERISTICS
c
Input Capacitance
C
ISS
C
RSS
C
OSS
Output Capacitance
Reverse Transfer Capacitance
V
DS
=15V, V
GS
= 0V
f =1.0MH
Z
510
P
F
235
P
F
P
F
56
SWITCHING CHARACTERISTICS
c
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
t
D(ON)
t
r
t
D(OFF)
t
f
V
DD
= 15V,
I
D
= 1A,
V
GEN
= 10V,
R
L
= 15
R
GEN
= 10
21
40
ns
ns
ns
ns
20
40
27
55
115
230
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Q
g
Q
gs
Q
gd
V
DS
=15V, I
D
= 1A,
V
GS
=10V
13
nC
nC
nC
6
2.1
C
Fall Time
=
=
2
3
N-Channel ELECTRICAL CHARACTERISTICS (T
A
=
m ohm
m ohm
100
50
30
20
V
DS
=15V, I
D
= 1A,V
GS
=10V
nC
V
DS
=15V, I
D
= 1A,V
GS
=4.5V
10
2
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