參數(shù)資料
型號: SDP20S30
廠商: INFINEON TECHNOLOGIES AG
英文描述: Silicon Carbide Schottky Diode
中文描述: 碳化硅肖特基二極管
文件頁數(shù): 1/8頁
文件大?。?/td> 216K
代理商: SDP20S30
2001-09-07
Page 1
SDP20S30
SDB20S30
Preliminary data
Silicon Carbide Schottky Diode
Revolutionary semiconductor
material - Silicon Carbide
Switching behavior benchmark
No reverse recovery
No temperature influence on
the switching behavior
No forward recovery
Product Summary
V
RRM
Q
c
I
F
300
V
23
nC
2x10
A
P-TO220-3-1.
P-TO220-3.SMD
Marking
D20S30
S20S30
Type
SDP20S30
Package
P-TO220-3-1.
Ordering Code
Q67040-S4419
SDB20S30
P-TO220-3.SMD
Q67040-S4374
1
2
3
Maximum Ratings
,at
T
j
= 25 °C, unless otherwise specified
(per leg)
Parameter
Symbol
I
F
I
FRMS
I
FSM
Value
10
Unit
A
Continuous forward current,
T
C
=100°C
RMS forward current
,
f
=50
Hz
Surge non repetitive forward current, sine halfwave
14
T
C
=25°C,
t
p
=10ms
Repetitive peak forward current
36
T
j
=150°C,
T
C
=100°C,
D
=0.1
Non repetitive peak forward current
I
FRM
45
t
p
=10μs,
T
C
=25°C
i
2
t
value
,
T
C
=25°C,
t
p
=10ms
Repetitive peak reverse voltage
Surge peak reverse voltage
I
FMAX
100
i
2
d
t
V
RRM
V
RSM
P
tot
T
j ,
T
stg
6.5
A2s
V
300
300
Power dissipation, single diode mode
,
T
C
=25°C
Operating and storage temperature
65
W
-55... +175
°C
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