參數(shù)資料
型號(hào): SDP8405-001
元件分類: 光敏三極管
英文描述: PHOTO TRANSISTOR DETECTOR
封裝: PLASTIC PACKAGE-2
文件頁(yè)數(shù): 2/4頁(yè)
文件大?。?/td> 503K
代理商: SDP8405-001
Silicon Phototransistor
SDP8405
ELECTRICAL CHARACTERISTICS
UNITS
TEST CONDITIONS
MIN
PARAMETER
SYMBOL
TYP
MAX
ABSOLUTE MAXIMUM RATINGS
(25C Free-Air Temperature unless otherwise noted)
Collector-Emitter Voltage
30 V
Emitter-Collector Voltage
5 V
Power Dissipation
70 mW []
Operating Temperature Range
-40C to 85C
Storage Temperature Range
-40C to 85C
Soldering Temperature (5 sec)
240C
Notes
1. Derate linearly from 25C free-air temperature at the rate of
0.18 mW/C.
SCHEMATIC
Honeywell reserves the right to make
changes in order to improve design and
supply the best products possible.
h
117
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
SDP8405-002 功能描述:光電晶體管 Silicon PhotoTrans T-1 Plastic Package RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗電流:200 nA 封裝 / 箱體:T-1
SDP8405-003 功能描述:光電晶體管 PHOTOTRANSISTOR T1 RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗電流:200 nA 封裝 / 箱體:T-1
SDP8405-011 功能描述:光電晶體管 INFRARED SENSORS RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗電流:200 nA 封裝 / 箱體:T-1
SDP8405-012 功能描述:光電晶體管 INFRARED SENSORS RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗電流:200 nA 封裝 / 箱體:T-1
SDP8405-013 功能描述:光電晶體管 0.37 mW/cm2 maximum OPEN COLLECTOR 50deg RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗電流:200 nA 封裝 / 箱體:T-1