參數(shù)資料
型號: SDR622MDBTX
廠商: SOLID STATE DEVICES INC
元件分類: 參考電壓二極管
英文描述: 20 A, 200 V, SILICON, RECTIFIER DIODE, TO-254AA
封裝: HERMETIC SEALED, TO-254, 3 PIN
文件頁數(shù): 1/2頁
文件大?。?/td> 227K
代理商: SDR622MDBTX
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
Designer’s Data Sheet
Part Number/Ordering Information 1/
SDR620
__ __ __ __
Screening 2/ __ = Not Screened
TX = TX Level
TXV = TXV Level
S = S Level
Leg Bend Option __ = Straight
(See Figure 1)
DB = Down Bend
UB = Up Bend
Package J = TO-257
M = TO-254
Z = TO-254Z
Pin Configuration __ = Normal
(See Table 1)
R = Reverse
Family/Voltage SDR620 = 100V
SDR621 = 150V
SDR622 = 200V
SDR620J, M & Z
Thru
SDR622J, M & Z
20A, 35nsec, 100-200 V
Hyper Fast Rectifier
Features:
Hyper Fast Recovery: 35nsec Maximum 3/
Low Reverse Leakage Current
Low Junction Capacitance
Hermetically Sealed Isolated Package
Higher Voltages Available
Available in Centertap Versions
Replaces 1N5816 and 1N5816R
TX, TXV, and S-Level Screening Available 2/
Maximum Ratings 4/
Symbol
Value
Units
Peak Repetitive Reverse Voltage
SDR620J, M & Z
SDR621J, M & Z
SDR622J, M & Z
VRRM
VRWM
VR
100
150
200
Volts
Average Rectified Forward Current
(Resistive Load, 60 Hz Sine Wave, TA = 25 °C)
Io
20
Amps
Peak Surge Current
(8.3 ms Pulse, Half Sine Wave, TA = 25 °C, per leg)
IFSM
300
Amps
Operating & Storage Temperature
TOP & TSTG
-65 to +200
C
Maximum Total Thermal Resistance
Junction to Case
J (TO-257)
M (TO-254)
Z (TO-254Z)
RθJC
2.1
1.2
C/W
Notes:
1/ For ordering information, Price, Operating Curves, and Availability- Contact Factory.
2/ Screened to MIL-PRF-19500.
3/ Recovery Conditions: IF = 500 mA, IR = 1 Amp, IRR = 250 mA.
4/ Unless Otherwise Specified, All Maximum Ratings/Electrical Characteristics @25°C.
TO-257 (J)
TO-254 (M)
TO-254Z (Z)
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RC0031C
DOC
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