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參數(shù)資料
| 型號(hào)： | SE370C756Ayyz |
| 廠商： | Texas Instruments, Inc. |
| 英文描述： | TMS370 MICROCONTROLLER FAMILY DATA BOOK |
| 中文描述： | TMS370微控制器系列數(shù)據(jù)手冊(cè) |
| 文件頁數(shù)： | 39/78頁 |
| 文件大?。?/td> | 919K |
| 代理商： | SE370C756AYYZ |
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GLOSSARY/SYMBOLS, TERMS, AND DEFINITIONS
1–31
POST OFFICE BOX 1443
HOUSTON, TEXAS 77251–1443
CSPF:
to external frames of the peripheral field (locations 10C0h – 10FFh).
Chip-Select Peripheral File. This signal has the same timing as EDS, but it goes active only during access
D
data:
Any information stored in or retrieved from a memory device.
debugger:
emulator, CDT370, or design kit.
A window-oriented software interface that helps the user to debug ’370 programs running on an
dedicated-capture registers:
at the time of a specified edge on one of the PACT input-capture pins. Unlike the circular buffer, the location of
the dedicated-capture register does not change.
An area in the PACT module dual-port RAM that stores the value of the default timer
default timer (also hardware timer):
PACT prescaled clock
A 20-bit hardware counter in the PACT module that is incremented by the
design kit:
family.
A low-cost tool that allows the user to analyze the hardware and software capabilities of the TMS370
DIP:
Dual In-line Package
dual-port RAM:
module.
An area in RAM that can be read from and written to by both the TMS370 CPU and the PACT
E
edge detection:
propriate output transitions to the rest of the module. The active transition can be configured to be low-to-high or
high-to-low.
A type of circuitry that senses an active pulse transition on a given timer input and provides ap-
EDS:
External Data Strobe. This signal goes low during external-memory operations. The rising edge of EDS vali-
dates the read-input data; the write data is available after the falling edge of EDS.
EEPROM:
under direct program control.
Electrically Erasable Programmable Read-Only Memory.Memory that can be programmed and erased
EPROM:
control.
Erasable Programmable Read-Only Memory.Memory that can be programmed under direct program
Erase:
and the device returns to its unprogrammed state.
Typically associated with EPROM and EEPROM. The procedure whereby programmed data is removed
ESD:
Electrostatic discharge
F
fully-static RAM:
therefore always active and ready to respond to input changes without the need of clocks. There is no precharge
required for static periphery.
In a fully-static RAM, the periphery as well as the memory array is fully static. The periphery is
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| SE370C758Ayyz | TMS370 MICROCONTROLLER FAMILY DATA BOOK |
| SE370C758Byyz | TMS370 MICROCONTROLLER FAMILY DATA BOOK |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SE370C756FZS | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:8-Bit Microcontroller |
| SE370C758A | 制造商:TI 制造商全稱:Texas Instruments 功能描述:8-BIT MICROCONTROLLER |
| SE370C758AFZT | 制造商:TI 制造商全稱:Texas Instruments 功能描述:8-BIT MICROCONTROLLER |
| SE370C758AJNT | 制造商:TI 制造商全稱:Texas Instruments 功能描述:8-BIT MICROCONTROLLER |
| SE370C758AYYZ | 制造商:TI 制造商全稱:Texas Instruments 功能描述:TMS370 MICROCONTROLLER FAMILY DATA BOOK |
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