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參數(shù)資料
| 型號(hào)： | SFH4289 |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | GaAlAs-IR-Lumineszenzdiode in SMT-Geh鋟se mit Linse GaAlAs Infrared Emitter in SMT Package with lens |
| 中文描述： | 發(fā)動(dòng)器紅外光在SMT Lumineszenzdiode，蓋赫鋟林斯本身麻省理工學(xué)院在SMT封裝的GaAIAs紅外發(fā)射器與鏡頭 |
| 文件頁數(shù)： | 3/6頁 |
| 文件大小： | 61K |
| 代理商： | SFH4289 |
SFH 4289
2001-10-09
3
Kennwerte
(
T
A
= 25
°
C)
Characteristics
Bezeichnung
Parameter
Symbol
Symbol
λ
peak
Wert
Value
Einheit
Unit
Wellenl
nge der Strahlung
Wavelength at peak emission
I
F
= 100 mA,
t
p
= 20 ms
Spektrale Bandbreite bei 50% von
I
max
Spectral bandwidth at 50% of
I
max
I
F
= 100 m A
Abstrahlwinkel
Half angle
880
nm
λ
80
nm
±
25
Grad
deg.
mm
2
Aktive Chipfl
che
Active chip area
A
0.09
Abmessungen der aktiven Chipfl
che
Dimensions of the active chip area
L
×
B
L
×
W
t
r
,
t
f
0.3
×
0.3
mm
Schaltzeiten,
I
e
von 10% auf 90% und von 90%
auf 10%, bei
I
F
= 100 mA,
R
L
= 50
Switching times,
Ι
e
from 10% to 90% and from
90% to10%,
I
F
= 100 mA,
R
L
= 50
Kapazit
t,
Capacitance
V
R
= 0 V,
f
= 1 MHz
Durchla
spannung,
Forward voltage
I
F
= 100 mA,
t
p
= 20 ms
I
F
= 1 A,
t
p
= 100
μ
s
Sperrstrom,
Reverse current
V
R
= 5 V
Gesamtstrahlungsflu
,
Total radiant flux
I
F
= 100 mA,
t
p
= 20 ms
Temperaturkoeffizient von
I
e
bzw.
Φ
e
,
I
F
= 100 mA
Temperature coefficient of
I
e
or
Φ
e
,
I
F
= 100 mA
Temperaturkoeffizient von
V
F
,
I
F
= 100 mA
Temperature coefficient of
V
F
,
I
F
= 100 mA
Temperaturkoeffizient von
λ
,
I
F
= 100 mA
Temperature coefficient of
λ
,
I
F
= 100 mA
0.5
μ
s
C
o
15
pF
V
F
V
F
I
R
1.5 (
≤
1.8)
3.0 (
≤
3.8)
0.01 (
≤
1)
V
V
μ
A
Φ
e
23
mW
TC
I
–
0.5
%/K
TC
V
–
2
mV/K
TC
λ
+ 0.25
nm/K
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