參數(shù)資料
型號(hào)： SFH640-2-X007
廠商： VISHAY SEMICONDUCTORS
元件分類： 光電耦合器
英文描述： 1 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER
封裝： ROHS COMPLIANT, SMD, 6 PIN
文件頁數(shù)： 2/7頁
文件大?。?/td> 110K
代理商： SFH640-2-X007
Document Number: 83682
For technical questions, contact: optocoupler.answers@vishay.com
www.vishay.com
Rev. 1.4, 10-Dec-08
709
SFH640
Optocoupler, Phototransistor Output,
with Base Connection, 300 BVCEO
Vishay Semiconductors
Notes
(1) Tamb = 25 °C, unless otherwise specified.
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum
ratings for extended periods of the time can adversely affect reliability.
(2) Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through
hole devices (DIP).
Note
Tamb = 25 °C, unless otherwise specified.
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
COUPLER
Isolation test voltage
between emitter and detector
VISO
5300/7500
VRMS/VPK
Isolation resistance
VIO = 500 V, Tamb = 25 °C
RIO
≥ 1012
Ω
VIO = 500 V, Tamb = 100 °C
RIO
≥ 1011
Ω
Insulation thickness between emitter
and detector
≥ 0.4
mm
Creepage distance
≥ 7mm
Clearance distance
≥ 7mm
Comparative tracking index per
DIN IEC 112/VDE 0303, part 1
CTI
175
Storage temperature range
Tstg
- 55 to + 150
°C
Operating temperature range
Tamb
- 55 to + 100
°C
Soldering temperature (2)
max. 10 s, dip soldering:
distance to seating plane
≥ 1.5 mm
Tsld
260
°C
ELECTRICAL CHARACTERISTICS
PARAMETER
TEST CONDITION
PART
SYMBOL
MIN.
TYP.
MAX.
UNIT
INPUT
Forward voltage
IF = 10 mA
VV
1.1
1.5
V
Reverse voltage
IR = 10 A
VR
6V
Reverse current
VR = 6 V
IR
0.01
10
A
Capacitance
VF = 0 V, f = 1 MHz
CO
25
pF
Thermal resistance
Rthja
750
K/W
OUTPUT
Collector emitter breakdown
voltage
ICE = 1 mA,
RBE = 1 MΩ
BVCER
300
V
Voltage emitter base
IEB = 10 A
BVBEO
7V
Collector emitter capacitance
VCE = 10 V, f = 1 MHz
CCE
7pF
Collector base capacitance
VCB = 10 V, f = 1 MHz
CCB
8pF
Emitter base capacitance
VEB = 5 V, f = 1 MHz
CEB
38
pF
Thermal resistance
Rthja
250
K/W
COUPLER
Coupling capacitance
CC
0.6
pF
Saturation voltage collector
emitter
IF = 10 mA, IC = 2 mA
SFH640-1
VCEsat
0.25
0.4
V
IF = 10 mA, IC = 3.2 mA
SFH640-2
VCEsat
0.25
0.4
V
IF = 10 mA, IC = 5 mA
SFH640-3
VCEsat
0.25
0.4
V
Collector emitter leakage
current
VCE = 200 V, RBE = 1 MΩ
ICER
1
100
nA
ABSOLUTE MAXIMUM RATINGS (1)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
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