參數(shù)資料
型號(hào)： SG-636PTF
廠商： Electronic Theatre Controls, Inc.
英文描述： Tantalum Molded Capacitor; Capacitance: 100uF; Voltage: 4V; Case Size: 3.5x2.8 mm; Packaging: Tape & Reel
中文描述： 高頻晶體振蕩器
文件頁(yè)數(shù)： 2/2頁(yè)
文件大小： 68K
代理商： SG-636PTF
Crystal oscillator
42
Output frequency range
Power source
voltage
Temperature
range
Frequency stability
Current consumption
Output disable current
Standby current
Duty
Output voltage
Output load condition (fan out)
Output enable
disable input voltage
Output rise time
Output fall time
Oscillation start up time
Aging
Shock resistance
f
O
V
DD-
GND
V
DD
T
STG
T
OPR
f/f
0
I
OP
I
OE
I
ST
tw/t
V
OH
V
OL
CL
V
IH
V
IL
t
TLH
t
THL
t
OSC
fa
S.R.
Refer to page 31. "Frequency range"
Stored as bare product after unpacking
Refer to page 31. "Frequency range"
-20
°
C to +70
°
C
No load condition
OE=GND (P
G)
ST=GND (SCG)
50 % V
DD
, CL = 25 pF
1.4 V Level, CL = 25 pF
I
OH
= -8 mA
I
OH
= -16 mA
I
OL
= 8 mA
I
OL
= 16 mA
OE, ST
OE, ST
20 % to 80 % V
DD
, CL
≤
25 pF
0.8 V to 2.0 V CL
≤
25 pF
0.4 V to 2.4 V CL
≤
25 pF
80 % to 20 % V
DD
CL
≤
25 pF
2.0 V to 0.8 V CL
≤
25 pF
2.4 V to 0.4 V CL
≤
25 pF
Time at minimum operating voltage to be 0 s
Ta=+25
°
C, V
DD
=5.0 V / 3.3 V, First year
Three drops on a hard board from 750 mm or
excitation test with 29400 m/s2 x 0.3 ms x 1/2
sine wave in 3 directions
Item
Remarks
Symbol
Specifications
SG-636PHG
SG-636PTG
SG-636PCG/SCG
2.21675 MHz to 33.0000 MHz
-0.5 V to +7.0 V
4.5 V to 5.5 V
-55
°
C to +100
°
C
-20
°
C to +70
°
C
B :
±
50 x 10
-6
C :
±
100 x 10
-6
25 mA Max.
20 mA Max.
—
2.7 V to 3.6 V
12 mA Max.
10 mA Max.
50
μ
A Max.
—
45 % to 55 %
—
40 % to 60 %
2.4 V Min.
—
—
0.4 V Max.
—
V
DD
-0.4 V Min.
—
V
DD
-0.4 V Max.
0.4 V Max.
—
25 pF
2.0 V Min.
0.8 V Max.
70 % V
DD
Min.
20 % V
DD
Max.
4.0 ns Max.
—
—
4.0 ns Max.
—
—
—
3.4 ns Max.
—
—
3.4 ns Max.
—
—
12 ms Max.
±
5 x 10
-6
/year Max.
1.2 ns Max.
2.4 ns Max.
—
1.2 ns Max.
2.4 ns Max.
±
20 x 10
-6
Max.
Max. supply voltage
Operating voltage
Storage temperature
Operating temperature
CMOS level
TTL level
CMOS level
TTL level
CMOS level
TTL level
CMOS level
TTL level
Output frequency range
Power source
voltage
Temperature
range
Frequency stability
Current consumption
Output disable current
Standby current
Duty
Output voltage
Output load condition (fan out)
Output enable disable input voltage
Output rise time
Output fall time
Oscillation start up time
Aging
Shock resistance
f
O
V
DD-
GND
V
DD
T
STG
T
OPR
f/f0
I
OP
I
OE
I
ST
tw/t
V
OH
V
OL
CL
V
IH
V
IL
t
TLH
t
THL
t
OSC
fa
S.R.
Refer to page 31. "Frequency range"
Stored as bare product after unpacking
Refer to page 31. "Frequency range"
No load condition
OE=GND(P
W)
ST=GND(S
W)
TTL load : 1.4 V, CL = Max.
TTL load : 1.4 V, 5TTL + 15 pF, fo
≤
66.6667 MHz
CMOS load : 50% V
DD
, CL = Max.
CMOS load : 50% V
DD
, CL = 25 pF, fo
≤
66.6667 MHz
I
OH
= -16 mA (
TW/HW)/-8 mA(
CW)
I
OL
= 16 mA (
TW/HW)/8 mA(
CW)
fo
≤
135 MHz
fo
≤
90 MHz
fo
≤
66.6667 MHz
fo
≤
135 MHz
fo
≤
90 MHz
fo
≤
66.6667MHz
OE,ST
OE,ST
TTL load: 0.8 V
→
2.0 V, CL = Max.
TTL load: 0.4 V
→
2.4 V, CL = Max.
CMOS load: 20 %
→
80 % V
DD
, CL= 25 pF
CMOS load: 20 %
→
80 % V
DD
, CL= 50 pF
CMOS load: 20 %
→
80 % V
DD
, CL= 15 pF
TTL load: 2.0 V
→
0.8 V, CL = Max.
TTL load: 2.4 V
→
0.4V, CL = Max.
CMOS load: 80 %
→
20 % V
DD
, CL= 25 pF
CMOS load: 80 %
→
20 % V
DD
, CL= 50 pF
CMOS load: 80 %
→
20 % V
DD
, CL= 15 pF
Time at minimum operating voltage to be 0 s
Ta=+25
°
C, VDD =5.0 V / 3.3 V, first year
Three drops on a hard board from 750 mm or
excitation test with 29400 m/s2 x 0.3 ms x 1/2
sine wave in 3 directions
Item
Remarks
Symbol
Specifications
SG-636PHW/SHW
32.0001 MHz to 135.0000 MHz
-0.5 V to +7.0 V
5.0 V
±
0.5 V
-55
°
C to +100
°
C
-20
°
C to +70
°
C
B :
±
50 x 10
-6
C :
±
100 x 10
-6
45 mA Max.
30 mA Max.
50
μ
A Max.
40 % to 60 %
45 % to 55 %
—
—
SG-636PTW/STW
SG-636PCW/SCW
3.3 V
±
0.3 V
28 mA Max.
16 mA Max.
—
—
—
—
40 % to 60 %
45 % to 55%
V
DD
-0.4 V Min.
0.4 V Max.
—
—
—
15 pF
25 pF
50 pF
40 % to 60 %
—
15 pF
—
—
—
5 TTL + 15 pF
25 pF
—
—
—
15 pF
—
—
2.0 V Min.
0.8 V Max.
70 % V
DD
Min.
20 % V
DD
Max.
—
—
—
—
3.0 ns Max.
—
—
—
—
3.0 ns Max.
2.0 ns Max.
4.0 ns Max.
—
—
—
2.0 ns Max.
4.0 ns Max.
—
—
—
—
—
3.0 ns Max.
4.0 ns Max.
—
—
—
3.0 ns Max.
4.0 ns Max.
—
10 ms Max.
±
5 x 10
-6
/year Max.
±
20 x 10
-6
Max.
Max. supply voltage
Operating voltage
Storage temperature
Operating temperature
相關(guān)PDF資料
PDF描述
SG-636PTG Tantalum Molded Capacitor; Capacitance: 2.2uF; Voltage: 4V; Case Size: 2x1.3 mm; Packaging: Tape & Reel
SG-636SCE Tantalum Molded Capacitor; Capacitance: 22uF; Voltage: 4V; Case Size: 2x1.3 mm; Packaging: Tape & Reel
SG-636SCG Tantalum Molded Capacitor; Capacitance: 3.3uF; Voltage: 4V; Case Size: 4x3.2 mm; Packaging: Tape & Ammo
SG-636SCW Tantalum Molded Capacitor; Capacitance: 3.3uF; Voltage: 4V; Case Size: 2x1.25 mm; Packaging: Tape & Ammo
SG-636STW HIGH-FREQUENCY CRYSTAL OSCILLATOR
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
SG-636PTF 10.0000MC 制造商:SEIKO_EPSON 功能描述:
SG-636PTF 10.0000MC ROHS 制造商:Epson Electronics America Inc 功能描述:SMD Crystal Oscillator 10MHz 5V 50pF 4-Pin SMD Bulk
SG-636PTF 14.7456MC0 ROHS 制造商:Epson Electronics America Inc 功能描述:
SG-636PTF 16.0000MC3 ROHS 制造商:Epson Electronics America Inc 功能描述:SMD Crystal Oscillator 16MHz 5V 50pF 4-Pin SMD T/R
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