參數(shù)資料
型號: SG6511J
廠商: MICROSEMI CORP-ANALOG MIXED SIGNAL GROUP
元件分類: 參考電壓二極管
英文描述: DIODE ARRAY CIRCUITS
中文描述: 0.3 A, 7 ELEMENT, SILICON, SIGNAL DIODE
封裝: CERAMIC, DIP-14
文件頁數(shù): 2/3頁
文件大?。?/td> 34K
代理商: SG6511J
DIODE ARRAY SERIES
6/91 Rev 1.1 2/94
Copyright
1994
L
IN
F
IN
ITY
Microelectronics Inc.
11861 Western Avenue
Garden Grove, CA 92841
(714) 898-8121
FAX: (714) 893-2570
2
ABSOLUTE MAXIMUM RATINGS
(Note 1 & 2)
Breakdown Voltage (V
) ....................................................
Output Current (I
), T
= 25°C
Continuous .................................................................
75V
300mA
Operating Junction Temperature
Hermetic (J, F Packages) ............................................
Storage Temperature Range ............................
Lead Temperature (Soldering, 10 seconds) ..................
150
°
C
-65
°
C to 200
°
C
300
°
C
Note 1. Exceeding these ratings could cause damage to the device.
Note 2. Applicable for each diode.
THERMAL DATA
J Package (14 & 16 Pin):
Thermal Resistance-
Junction to Case
,
θ
JC
.................. 30°C/W
Thermal Resistance-
Junction to Ambient
,
θ
JA
.............. 80°C/W
F Package (14 Pin):
Thermal Resistance-
Junction to Case
,
θ
JC
.................. 80°C/W
Thermal Resistance-
Junction to Ambient
,
θ
JA
........... 140°C/W
F Package (16 Pin):
Thermal Resistance-
Junction to Case
,
θ
JC
.................. 70°C/W
Thermal Resistance-
Junction to Ambient
,
θ
JA
........... 115°C/W
Note A. Junction Temperature Calculation: T
= T
+ (P
x
θ
).
Note B. The above numbers for
θ
are maximums for the limiting
thermal resistance of the package in a standard mount-
ing configuration. The
θ
numbers are meant to be
guidelines for the thermal performance of the device/pc-
board system. All of the above assume no ambient
airflow.
Operating Ambient Temperature Range
SG6100 ..........................................................-55
°
C to 150
°
C
SG6101 ..........................................................-55
°
C to 150
°
C
Note 3. Range over which the device is functional.
RECOMMENDED OPERATING CONDITIONS
(Note 3)
ELECTRICAL CHARACTERISTICS
(Unless otherwise specified, these specifications apply for the operating ambient temperature of T
= 25
°
C for each diode. Low duty cycle pulse testing
techniques are used which maintains junction and case temperatures equal to the ambient temperature.)
1.0
1.0
25
100
50
4
15
5
Min.
75
Typ. Max.
V
V
V
nA
nA
μ
A
pf
ns
ns
I
= 5
μ
A, Duty Cycle < 20%
Duty Cycle
2%, 300 μs pulse
I
F
= 100mA
I
F
= 10mA, T
A
= -55°C
V
R
= 20V
V
R
= 40V
V
R
= 40V, T
= 150°C
V
R
= 0V, f = 1MHz, Pin-to-pin
I
F
= 500mA, t
r
15ns, V
fr
= 1.8V, R
S
= 50
I
F
= I
R
= 200mA, i
rr
= 20mA, R
L
= 100
Breakdown Voltage (V
BR
)
Forward Voltage (V
F
)
Reverse Current (I
R
)
Capacitance (C)
(Note 4)
Forward Recovery Time (t
fr
)
(Note 4)
Reverse Recovery Time (t
rr
)
(Note 4)
Test Conditions
Units
Parameter
Note 4. The parameters, although guaranteed, are not 100% tested in production.
SG6511 ..........................................................-55
°
C to 150
°
C
SG6510 ..........................................................-55
°
C to 150
°
C
SG6100/SG6511
SG6010/SG6510
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