參數(shù)資料
型號(hào)： SGB15N60
廠商： SIEMENS A G
元件分類： 功率晶體管
英文描述： Fast S-IGBT in NPT-technology( NPT 技術(shù)中的快速 S-IGBT)
中文描述： 31 A, 600 V, N-CHANNEL IGBT, TO-263AB
文件頁(yè)數(shù)： 7/12頁(yè)
文件大?。?/td> 266K
代理商： SGB15N60
SGP15N60
SGB15N60, SGW15N60
7
Mar-00
E
,
S
0A
5A
10A
15A
20A
25A
30A
35A
0.0mJ
0.2mJ
0.4mJ
0.6mJ
0.8mJ
1.0mJ
1.2mJ
1.4mJ
1.6mJ
1.8mJ
E
on
*
E
off
E
ts
*
E
,
S
0
20
R
G
,
GATE RESISTOR
40
60
80
0.0mJ
0.2mJ
0.4mJ
0.6mJ
0.8mJ
1.0mJ
1.2mJ
1.4mJ
E
ts
*
E
on
*
E
off
I
C
,
COLLECTOR CURRENT
Figure 13. Typical switching energy losses
as a function of collector current
(inductive load,
T
j
= 150
°
C,
V
CE
= 400V,
V
GE
= 0/+15V,
R
G
= 21
)
Figure 14. Typical switching energy losses
as a function of gate resistor
(inductive load,
T
j
= 150
°
C,
V
CE
= 400V,
V
GE
= 0/+15V,
I
C
= 15A)
E
,
S
0°C
50°C
100°C
150°C
0.0mJ
0.2mJ
0.4mJ
0.6mJ
0.8mJ
1.0mJ
E
ts
*
E
on
*
E
off
Z
t
,
T
1μs
10μs
100μs
1ms
10ms
100ms
1s
10
-4
K/W
10
-3
K/W
10
-2
K/W
10
-1
K/W
10
0
K/W
0.01
0.02
0.05
0.1
0.2
single pulse
D
=0.5
T
j
,
JUNCTION TEMPERATURE
Figure 15. Typical switching energy losses
as a function of junction temperature
(inductive load,
V
CE
= 400V,
V
GE
= 0/+15V,
I
C
= 15A,
R
G
= 21
)
t
p
,
PULSE WIDTH
Figure 16. IGBT transient thermal
impedance as a function of pulse width
(
D
=
t
p
/
T
)
*)
E
and
E
include losses
due to diode recovery.
*)
E
and
E
include losses
due to diode recovery.
*)
E
and
E
include losses
due to diode recovery.
C
1
=
τ
1
/
R
1
R
1
R
2
C
2
=
τ
2
/
R
2
R
,(1/W )
0.5321
0.2047
0.1304
0.0027
τ
,
(s)
=
0.04968
2.58*10
-3
2.54*10
-4
3.06*10
-4
相關(guān)PDF資料
PDF描述
SGP15N60 Fast S-IGBT in NPT-technology( NPT 技術(shù)中的快速 S-IGBT)
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
SGB15N60_06 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Fast IGBT in NPT-technology
SGB15N60ATMA1 制造商:Infineon Technologies AG 功能描述:Trans IGBT Chip N-CH 600V 31A 3-Pin(2+Tab) TO-263 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Tape and Reel 制造商:Infineon Technologies AG 功能描述:IGBT NPT 600V 31A 139W TO263-3
SGB15N60HS 功能描述:IGBT 晶體管 IGBT PRODUCTS RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
SGB15N60HS_06 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:High Speed IGBT in NPT-technology
SGB15N60HSATMA1 制造商:Infineon Technologies AG 功能描述:Trans IGBT Chip N-CH 600V 27A 3-Pin(2+Tab) TO-263 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Tape and Reel 制造商:Infineon Technologies AG 功能描述:IGBT NPT 600V 27A 138W TO263-3
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