參數(shù)資料
型號: SGW6N60UF
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: IGBT 晶體管
英文描述: Ultra-Fast IGBT(超高速轉(zhuǎn)換絕緣柵雙極晶體管)
中文描述: 6 A, 600 V, N-CHANNEL IGBT, TO-263AB
封裝: D2PAK-3
文件頁數(shù): 4/6頁
文件大?。?/td> 541K
代理商: SGW6N60UF
2000 Fairchild Semiconductor International
SGW6N60UF Rev. A
S
1
10
100
400
5
10
100
300
Eoff
Eon
Eoff
Common Emitter
V
= 300V, V
GE
=
±
15V
I
C
= 3A
T
C
= 25
T
C
= 125
S
Gate Resistance, R
G
[
]
1
10
100
400
10
100
Common Emitter
V
CC
= 300V, V
GE
=
±
15V
I
C
= 3A
T
C
= 25
T
C
= 125
Ton
Tr
S
Gate Resistance, R
G
[
]
1
10
100
400
50
100
600
Toff
Tf
Toff
Tf
Common Emitter
V
= 300V, V
GE
=
±
15V
I
C
= 3A
T
C
= 25
T
C
= 125
S
Gate Resistance, R
G
[
]
Fig 7. Capacitance Characteristics
Fig 8. Turn-On Characteristics vs.
Gate Resistance
Fig 9. Turn-Off Characteristics vs.
Gate Resistance
Fig 10. Switching Loss vs. Gate Resistance
Fig 11. Turn-On Characteristics vs.
Collector Current
Fig 12. Turn-Off Characteristics vs.
Collector Current
1
2
3
4
5
6
50
100
500
Toff
Tf
Common Emitter
V
CC
= 300V, V
GE
=
±
15V
R
G
= 80
T
C
= 25
T
C
= 125
S
Collector Current, I
C
[A]
1
2
3
4
5
6
10
100
200
Ton
Tr
Common Emitter
V
CC
= 300V, V
GE
=
±
15V
R
G
= 80
T
C
= 25
T
C
= 125
S
Collector Current, I
C
[A]
1
10
30
0
50
100
150
200
250
300
350
400
Cres
Coes
Cies
Common Emitter
V
GE
= 0V, f = 1MHz
T
C
= 25
C
Collector - Emitter Voltage, V
CE
[V]
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