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參數(shù)資料
| 型號(hào)： | SHD118536PB |
| 廠商： | SENSITRON SEMICONDUCTOR |
| 元件分類： | 整流器 |
| 英文描述： | 120 A, SILICON, RECTIFIER DIODE |
| 封裝： | HERMETIC SEALED, SHD-5B, 3 PIN |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大?。?/td> | 53K |
| 代理商： | SHD118536PB |
221 WEST INDUSTRY COURT DEER PARK, NY 11729-4681 PHONE (631) 586-7600 FAX (631) 242-9798
World Wide Web - http://www.sensitron.com E-Mail - sales@sensitron.com
SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 4604, REV. A
HERMETIC SCHOTTKY RECTIFIER
Low Forward Voltage Drop
Features:
Soft Reverse Recovery at Low and High Temperature
Low Forward Voltage Drop
Low Power Loss, High Efficiency
High Surge Capacity
Guard Ring for Enhanced Durability and Long Term Reliability
Guaranteed Reverse Avalanche Characteristics
Maximum Ratings
Characteristics
Symbol
Condition
Max.
Units
Peak Inverse Voltage
VRWM
-
200
V
Max. Average Forward Current
IF(AV)
50% duty cycle, rectangular
wave form (Single)
60
A
Max. Average Forward Current
IF(AV)
50% duty cycle, rectangular
wave form (Common Cathode)
120
A
Max. Peak One Cycle Non-
Repetitive Surge Current
IFSM
8.3 ms, half Sine wave
(per leg)
860
A
Non-Repetitive Avalanche Energy
EAS
TJ = 25 °C, IAS = 3.0 A,
L = 4.4 mH (per leg)
20
mJ
Repetitive Avalanche Current
IAR
IAS decay linearly to 0 in 1 s
limited by T
J max VA=1.5VR
3.0
A
Maximum Thermal Resistance
RθJC
DC operation
0.18
°C/W
Max. Junction Temperature
TJ
-
-65 to +200
°C
Max. Storage Temperature
Tstg
-
-65 to +200
°C
Electrical Characteristics
Characteristics
Symbol
Condition
Max.
Units
Max. Forward Voltage Drop
VF1
@ 60A, Pulse, TJ = 25 °C
0.95
V
(per leg)
VF2
@ 60A, Pulse, TJ = 125 °C
0.79
V
Max. Reverse Current
IR1
@VR = 200V, Pulse,
TJ = 25 °C
0.3
mA
(per leg)
IR2
@VR = 200V, Pulse,
TJ = 125 °C
3.0
mA
Max. Junction Capacitance
(per leg)
CT
@VR = 5V, TC = 25 °C
fSIG = 1MHz,
VSIG = 50mV (p-p)
900
pF
SHD118536
SHD118536A
SHD118536B
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