參數(shù)資料
型號(hào)： SI3200-G-GS
廠商： Silicon Laboratories Inc
文件頁(yè)數(shù)： 66/112頁(yè)
文件大小： 0K
描述： IC SLIC/CODEC 125V LINE 16SOIC
標(biāo)準(zhǔn)包裝： 48
系列： ProSLIC®
功能： 用戶線路接口概念（SLIC），CODEC
接口： GCI，PCM，SPI
電路數(shù)： 2
電源電壓： 3.3V，5V
電流 - 電源： 110µA
功率（瓦特）： 941mW
工作溫度： -40°C ~ 85°C
安裝類(lèi)型： 表面貼裝
封裝/外殼： 16-SOIC（0.154"，3.90mm Width）裸露焊盤(pán)
供應(yīng)商設(shè)備封裝： 16-SOIC N
包裝： 管件
包括： 電池切換，BORSCHT 功能，DTMF 生成和解碼，F(xiàn)SK 音調(diào)生成，調(diào)制解調(diào)器和傳真音調(diào)檢測(cè)
Si3220/25 Si3200/02
Rev. 1.3
57
Not
Recommended
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The Si3220 can also add a dc offset component to the
ringing signal and detect a ring trip event by monitoring
the dc loop current flowing once the terminal equipment
transitions to the off-hook state. Although adding dc
offset reduces the maximum available ringing amplitude
(using the same ringing supply), this method is required
to reliably detect a valid ring trip event when sourcing
longer loop lengths. The dc offset can be programmed
from 0 to 64.32 V in the RINGOF RAM address as
required to produce adequate dc loop current in the off-
hook state. Depending on the loop length and the ring
trip method, the ac or dc ring trip detection circuits are
disabled by setting their respective ring trip thresholds,
RTACTH or RTDCTH, sufficiently high so that they do
not trip under any condition.
3.15.5. Si3225 Ring Trip Detection
The Si3225 implements an external ring trip detection
scheme when using a standard battery-backed external
ringing generator. In this application, the centralized
ringing generator produces an unbalanced ringing
signal that is distributed to individual TIP/RING pairs. A
per-channel ringing relay is required to disconnect the
Si3225 from the TIP/RING pair and apply the ringing
signal. By monitoring the ringing feed path across a ring
feed sense resistor (RRING in Figure 31 on page 60) in
series with the ringing source, the Si3225 can detect the
dc current path created when the hook switch inside the
terminal equipment closes. The internal ring trip
detection circuitry is identical to that illustrated in
Figure 27. Figure 31 illustrates the typical external ring
trip circuitry required for the Si3225. Because of the
long loop nature of these applications, a dc ring trip
detection scheme is typically used. The user can
disable the ac ring trip detection circuitry by setting the
RTACTH threshold sufficiently high so it does not trip
under any condition.
3.16. Relay Driver Considerations
The Dual ProSLIC devices include up to three
dedicated relay drivers to drive external ringing and/or
test relays. Test relay drivers TRD1a, TRD1b, TRD2a,
and TRD2b are provided in all product versions, and
ringing relay drivers RRDa and RRDb are included for
the Si3225 only. In most applications, the relay can be
driven directly from the Dual ProSLIC with no external
relay drive circuitry required. Figure 28 illustrates the
internal relay driver circuitry using a 3 V or 5 V relay.
Figure 28. Dual ProSLIC Internal Relay Drive
Circuitry
The internal driver logic and drive circuitry are powered
by the same VDD supply as the chip’s main VDD supply
(VDD1–VDD4 pins). When operating external relays from
a VCC supply equal to the chip’s VDD supply, an internal
diode network provides protection against overvoltage
conditions from flyback spikes when the relay is
opened. Either 3 V or 5 V relays can be used in the
configuration shown in Figure 28, and either polarized
or non-polarized relays are acceptable if the VCC and
VDD supplies are identical. The input impedance, RIN, of
the relay driver pins is a constant 11
while sinking
less than the maximum rated 85 mA into the pin.
If the operating voltage of the relay (VCC) is higher than
the Dual ProSLIC VDD supply voltage, an external drive
circuit is required to eliminate leakage from VCC to VDD
through
the
internal
protection
diode.
In
this
configuration, a polarized relay will provide optimal
overvoltage
protection
and
minimal
external
components. Figure 29 illustrates the required external
drive circuit, and Table 32 provides recommended
values for RDRV for typical relay characteristics and VCC
supplies. The output impedance, ROUT, of the relay
driver pins is a constant 63
while sourcing less than
the maximum rated 28 mA out of the pin.
Si3220/
Si3225
Relay
Driver
Logic
V
DD
GDD
RRDa/b
TRD1a/b
TRD2a/b
V
CC
3 V/5 V Relay
(polarized or
non-polarized)
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參數(shù)描述
SI3200-G-GSR 功能描述:電信線路管理 IC 100 V Linefeed Interface RoHS:否 制造商:STMicroelectronics 產(chǎn)品:PHY 接口類(lèi)型:UART 電源電壓-最大:18 V 電源電壓-最小:8 V 電源電流:30 mA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:VFQFPN-48 封裝:Tray
SI3200-GS 功能描述:射頻無(wú)線雜項(xiàng) 100 V Linefeed codec RoHS:否 制造商:Texas Instruments 工作頻率:112 kHz to 205 kHz 電源電壓-最大:3.6 V 電源電壓-最小:3 V 電源電流:8 mA 最大功率耗散: 工作溫度范圍:- 40 C to + 110 C 封裝 / 箱體:VQFN-48 封裝:Reel
SI3200-GSR 制造商:Silicon Laboratories Inc 功能描述:
Si3200-KS 功能描述:電信線路管理 IC 100 V LINEFEED INTERFACE IC.CHIPSET RoHS:否 制造商:STMicroelectronics 產(chǎn)品:PHY 接口類(lèi)型:UART 電源電壓-最大:18 V 電源電壓-最小:8 V 電源電流:30 mA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:VFQFPN-48 封裝:Tray
SI3200-KSR 制造商:Silicon Laboratories Inc 功能描述:
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