參數(shù)資料
型號: SI3216DCQ1-EVB
廠商: Silicon Laboratories Inc
文件頁數(shù): 40/122頁
文件大小: 0K
描述: DAUGHTER CARD W/SI3201 INTERFACE
標(biāo)準(zhǔn)包裝: 1
系列: ProSLIC®
主要目的: 接口,模擬前端(AFE)
已用 IC / 零件: Si3216
已供物品: 板,CD
Si3216
24
Rev. 1.0
Not
Recommended
fo
r N
ew
D
esi
gn
s
Figure 14. Si321xM MOSFET/Transformer DC-DC Converter Circuit
Table 15. Si321x BJT/Inductor DC-DC Converter Component Values
Component(s)
Value
Supplier
C9
10 F, 100 V, Electrolytic, ±20%
Panasonic
C10*
0.1 F, X7R, ±20%
Murata, Johanson, Novacap, Venkel
C14*
0.1 F, X7R, ±20%
Murata, Johanson, Novacap, Venkel
C25*
10
F, Electrolytic, ±20%
Panasonic
R16
200
, 1/10 W, ±5%
R17
1/10 W, ±5% (See “AN45: Design Guide for The Si3210 DC-
DC Converter” or Table 20 for value selection)
R18
1/4 W, ±5% (See AN45 or Table 20 for value selection)
R19,R20
1/10 W, ±1% (See AN45 or Table 20 for value selection)
F1
Fuse
Belfuse SSQ Series
D1
Ultra Fast Recovery 200 V, 1 A Rectifier
General Semi ES1D; Central Semi
CMR1U-02
L1
1A, Shielded Inductor (See AN45 or
Table 20 for value selection)
API Delevan SPD127 series, Sumida
CDRH127 series, Datatronics DR340-1
series, Coilcraft DS5022
Q7
120 V, High Current Switching PNP
Zetex FZT953, FZT955, ZTX953,
ZTX955; Sanyo 2SA1552
Q8
60 V, General Purpose Switching NPN
ON Semi MMBT2222ALT1; Central
Semi CMPT2222A; Zetex FMMT2222
*Note: Voltage rating of this device must be greater than VDC.
D1
ES1D
C9
10 F
C25
2
10 F
R19
1
R20
1
R18
1
R22
22
R17
200 k
F1
SDCH
SDCL
DCFF
DCDRV
GND
VBAT
C14
2
0.1 F
VDC
C27
470 pF
M1
IRLL014N
T11
NC
Note 1
1
2
3
4
10
S
i32
1xM
6
Notes:
1. Values and configurations for these components can be derived
from Table 19 or from “AN45: Design Guide for the Si3210/15/16
DC-DC Converter”.
2. Voltage rating for C14 and C25 must be greater than VDC.
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