參數(shù)資料
型號： SI3220PPTX-EVB
廠商： Silicon Laboratories Inc
文件頁數(shù)： 52/112頁
文件大?。?/td> 0K
描述： BOARD EVAL W/DISCRETE INTERFACE
標準包裝： 1
系列： ProSLIC®
主要目的： 接口，模擬前端（AFE）
已用 IC / 零件： Si3220
已供物品： 板，CD
Si3220/25 Si3200/02
44
Rev. 1.3
Not
Recommended
fo
r N
ew
D
esi
gn
s
When generating a high-voltage ringing amplitude using
the Si3220, the power dissipated during the OHT state
typically increases due to operating from the ringing
battery supply in this mode. To reduce power, the
chipset provides the ability to accommodate up to three
separate battery supplies by implementing a secondary
battery
switch
using
a
few
low-cost
external
components as illustrated in Figure 20.
The Si3220’s BATSEL pin is used to switch between the
VBHI (typically –48 V) and VBLO (typically –24 V) rails
using the switch internal to the Si3200/2. The Si3220’s
GPO pin is used along with the external transistor circuit
to switch the VBRING rail (the ringing voltage battery rail)
onto the Si3200/2’s VBAT pin when ringing is enabled.
The GPO signal is driven automatically by the ringing
cadence provided that the RRAIL bit of the RLYCON
register is set to 1 (signifying that a third battery rail is
present).
Figure 20. 3-Battery Switching with Si3220/Si3200/Si3202
SVBAT
GP
O
BA
TSE
L
Si3200/2
VBAT
VBATH
VBATL
BATSEL
V
BRING
V
BLO
0.1
F
0.1
F
806 k
D1
IN4003
R103
CXT5551
Q2
R102
Q1
CXT5401
R101
10 k
402 k
V
BHI
R9
40.2 k
Si3220
Table 24. Three-Battery Switching Components
Component
Value
Comments
D1
200 V, 200 mA
1N4003 or similar
Q1
100 V PNP
CXT5401 or
similar
Q2
100 V NPN
CXT5551 or
similar
R101
1/10 W, ± 5%
2.4 k
for V
DD=3.3 V
3.9 k
for V
DD=5 V
R102
10 k
,1/10 W, ± 5%
R103
402 k
,1/10 W,± 1%
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