參數(shù)資料
型號: SI7458DP
廠商: Vishay Intertechnology,Inc.
英文描述: N-Channel 20-V (D-S) Fast Switching MOSFET
中文描述: N溝道20 - V(下局副局長)快速開關(guān)MOSFET
文件頁數(shù): 1/4頁
文件大小: 51K
代理商: SI7458DP
TrenchFET Power MOSFET
New Low Thermal Resistance PowerPAK
Package with Low 1.07-mm Profile
Synchronous Rectifier–Low Output Voltage
Portable Computer Battery Selection or
Protection
Si7458DP
Vishay Siliconix
New Product
Document Number: 71821
S-20012—Rev. A, 04-Mar-02
www.vishay.com
1
N-Channel 20-V (D-S) Fast Switching MOSFET
V
DS
(V)
r
DS(on)
( )
I
D
(A)
0.0045 @ V
GS
= 4.5 V
0.0075 @ V
GS
= 2.5 V
22
20
19
1
2
3
4
5
6
7
8
S
S
S
G
D
D
D
D
6.15 mm
5.15 mm
PowerPak
SO-8
Bottom View
N-Channel MOSFET
G
D
S
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
V
DS
20
Gate-Source Voltage
V
GS
12
V
T
A
= 25 C
22
13.4
Continuous Drain Current
(T
J
= 150 C)
a
T
A
= 70 C
I
D
17.6
10.7
Pulsed Drain Current
I
DM
50
A
Continuous Source Current (Diode Conduction)
a
I
S
4.3
1.6
T
A
= 25 C
5.2
1.9
Maximum Power Dissipation
a
T
A
= 70 C
P
D
3.3
1.2
W
Operating Junction and Storage Temperature Range
T
J
, T
stg
–55 to 150
C
Parameter
Symbol
Typical
Maximum
Unit
t
10 sec
18
23
Maximum Junction-to-Ambient
a
Steady State
R
thJA
50
65
C/W
Maximum Junction-to-Case (Drain)
Steady State
R
thJC
1.0
1.5
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
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