參數(shù)資料
型號(hào): SI9939DY-T1
廠商: VISHAY SILICONIX
元件分類: 小信號(hào)晶體管
英文描述: 3500 mA, 30 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET
文件頁(yè)數(shù): 5/7頁(yè)
文件大小: 121K
代理商: SI9939DY-T1
Si9939DY
Vishay Siliconix
Document Number: 70146
S-00652—Rev. G, 27-Mar-00
www.vishay.com
S FaxBack 408-970-5600
5
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
PCHANNEL
0
4
8
12
16
20
02468
10
0
2
4
6
8
10
0369
12
15
0
0.1
0.2
0.3
0.4
0.5
0.6
0
4
8
12
16
20
Output Characteristics
Transfer Characteristics
Gate Charge
On-Resistance vs. Drain Current
VDS – Drain-to-Source Voltage (V)
Drain
Current
(A)
I
D
VGS = 10 thru 6V
3 V
VGS – Gate-to-Source Voltage (V)
Drain
Current
(A)
I
D
Gate-to-Source
V
oltage
(V)
Qg – Total Gate Charge (nC)
VDS – Drain-to-Source Voltage (V)
C
Capacitance
(pF)
V
GS
VGS = 10 V
ID = 3.5 A
On-Resistance
(
r DS(on)
)
ID – Drain Current (A)
Capacitance
On-Resistance vs. Junction Temperature
TJ – Junction Temperature (_C)
(Normalized)
On-Resistance
(
r
DS(on)
)
10 V
6 V
4 V
0
4
8
12
16
20
0123456
–55
_C
TC = 125_C
0
300
600
900
1200
1500
0
6
12
18
24
30
Crss
Coss
Ciss
0
0.4
0.8
1.2
1.6
2.0
–50
0
50
100
150
VGS = 10 V
ID = 3.5 A
2, 1 V
VGS = 4.5 V
25
_C
5 V
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