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參數(shù)資料
| 型號： | SI9939DY |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | Complimentary 30-V (D-S) MOSFET |
| 中文描述： | 免費(fèi)30 V的（副）MOSFET的 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 78K |
| 代理商： | SI9939DY |
Si9939DY
Vishay Siliconix
www.vishay.com FaxBack 408-970-5600
2
Document Number: 70146
S-00652—Rev. G, 27-Mar-00
Parameter
Symbol
Test Condition
Min
Typ
a
Max
Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250 A
N-Ch
1.0
V
V
DS
= V
GS
, I
D
= –250 A
P-Ch
–1.0
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
20 V
100
nA
Zero Gate Voltage Drain Current
V l
D i C
I
DSS
V
DS
= 24 V, V
GS
= 0 V
N-Ch
1
A
V
DS
= –24 V, V
GS
= 0 V
P-Ch
–1
V
DS
= 15 V, V
GS
= 0 V, T
J
= 70 C
N-Ch
5
V
DS
= –15 V, V
GS
= 0 V, T
J
= 70 C
P-Ch
–5
O S
On-State Drain Current
D i C
b
I
D(on)
V
DS
5 V, V
GS
= 10 V
N-Ch
20
A
V
DS
–5 V, V
GS
= –10 V
P-Ch
–20
V
DS
5 V, V
GS
= 4.5 V
N-Ch
3.5
V
DS
–5 V, V
GS
= –4.5 V
P-Ch
–3.5
D i S
Drain-Source On-State Resistance
O S
O S
b
V
GS
= 10 V, I
D
= 3.5 A
N-Ch
0.04
0.05
V
GS
= –10 V, I
D
= 3.5 A
P-Ch
0.074
0.10
r
DS(on)
V
GS
= 6 V, I
D
= 3 A
N-Ch
0.045
0.07
V
GS
= – 6 V, I
D
= 3 A
P-Ch
0.090
0.12
V
GS
= 4.5 V, I
D
= 2.5 A
N-Ch
0.054
0.08
V
GS
= –4.5 V, I
D
= 2 A
P-Ch
0.115
0.16
Forward Transconductance
b
g
fs
V
DS
= 15 V, I
D
= 3.5 A
N-Ch
9
S
V
DS
= –15 V, I
D
= –3.5 A
P-Ch
6
Diode Forward Voltage
b
V
SD
I
S
= 1.7 A, V
GS
= 0 V
N-Ch
0.75
1.2
V
I
S
= –1.7 A, V
GS
= 0 V
P-Ch
–0.75
–1.2
Dynamic
a
Total Gate Charge
Q
g
N Ch
N-Channel
N-Ch
14
35
V
DS
= 10 V V
V
GS
= 10 V, I
D
= 3.5 A
10 V I
3 5 A
P-Ch
14.5
35
Gate-Source Charge
Q
gs
N-Ch
1.9
nC
P-Channel
V
DS
= –10 V,
V
= –10 V
I
D
= –3.5 A
P-Ch
2.7
Gate-Drain Charge
Q
gd
N-Ch
2.8
P-Ch
3.5
Turn-On Delay Time
t
d(on)
N Ch
N-Channel
N-Ch
10
30
P-Ch
11
30
Rise Time
t
r
V
= 15 V, R
= 15
1 A, V
GEN
= 10 V, R
G
= 6
N-Ch
10
40
I
D
P-Ch
11
40
Turn-Off Delay Time
t
d(off)
P-Channel
15 V R
V
= –15 V, R
= 15
–1 A, V
= –10 V, R
= 6
1 A, V
GEN
10 V, R
G
6
N-Ch
26
50
ns
I
D
P-Ch
30
50
Fall Time
t
f
N-Ch
10
50
P-Ch
12
50
Source-Drain Reverse Recovery Time
t
rr
I
F
= 3.5 A, di/dt = 100 A/ s
N-Ch
60
120
P-Ch
40
100
Notes
a.
b.
Guaranteed by design, not subject to production testing.
Pulse test; pulse width
300 s, duty cycle
2%.
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