參數(shù)資料
型號(hào)： Si9978DW
廠商： Vishay Intertechnology,Inc.
英文描述： Configurable H-Bridge Driver(可配置的H橋驅(qū)動(dòng)器)
中文描述： 可配置的H橋驅(qū)動(dòng)器（可配置的魔橋驅(qū)動(dòng)器）
文件頁(yè)數(shù)： 2/6頁(yè)
文件大?。?/td> 172K
代理商： SI9978DW
Si9978DW
Vishay Siliconix
S-60752—Rev. D, 05-Apr-99
2
FaxBack 408-970-5600, request 70011
www.siliconix.com
ABSOLUTE MAXIMUM RATINGS
Voltage on pins 2-7 with respect to ground. . . . . . -0.3 to V
DD
+ 0.3 V
Voltage on pin 24 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to 50 V
Voltage on pins 17, 19, 21, 23 . . . . . . . . . . . . . . . . . . . . -0.3 to +60 V
Voltage on pins 18, 22 . . . . . . . . . . . . . . . . . . . . . . . . . . . . .-2 to 50 V
Operating Temperature (T
A
). . . . . . . . . . . . . . . . . . . . . . .-40 to +85
°
C
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . .-65 to 150
°
C
Maximum Junction Temperature (T
J
). . . . . . . . . . . . . . . . . . . . .150
°
C
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500 mW
RECOMMENDED OPERATING CONDITIONS
V+ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +20 to 40 V
DC
R
A
, R
B
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .100 k
SPECIFICATIONS
Parameter
Symbol
Test Conditions
Unless Otherwise Specified
V+ = 20 to 40 V
Limits
-40 to 85
°
C
Unit
Min
a
Typ
b
Max
a
Power
Supply Voltage Range
V+
20
40
V
Logic Voltage
V
DD
I+
14.5
16
17.5
Supply Current
Inputs (DIR, PWM, EN, QS, MODE, BRK)
I
DD
= 0 mA
3
5
mA
High-State
V
IH
V
IL
I
IH
I
IL
4.0
V
Low-State
1.0
High-State Input Current
V
IH
= V
DD
V
IL
= 0 V
10
μA
Low-State Input Current
Outputs
-100
-50
-25
Low-Side Gate Drive, High State
V
GBH
V
GBL
V
GTH
V
GTL
V
CAP
t
rL
t
fL
t
rH
t
fH
14
16
17.5
V
Low-Side Gate Drive, Low State
1
High-Side Gate Drive, High State
S
A, B
= 0 V
14
16
18
High-Side Gate Drive, Low State
Capacitor Voltage
c
1
V+ = 40 V
55
Low-Side Switching, Rise Time
Rise Time = 1 to 10 V
Fall Time = 10 to 1 V
C
L
= 600 pF
110
ns
Low-Side Switching, Fall Time
50
High-Side Switching, Rise Time
110
High-Side Switching, Fall Time
50
Break-Before-Make Time
250
FAULT, CL
V
OL
I
OH
I
OL
= 1 mA
FAULT, CL = V
DD
0.4
V
FAULT, CL Leakage Current
Protection
0.2
10
μA
Low-Side Undervoltage Lockout
UVLL
0.8 V
DD
0.8
V
Low-Side Hysteresis
V
H
High-Side Undervoltage Lockout
UVLH
S
A, B
= 0 V
V
DD
-3.3 V
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