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參數(shù)資料
| 型號： | SIGC61T60NC |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | IGBT Chip in NPT-technology |
| 中文描述： | 在不擴散核武器條約IGBT芯片技術(shù) |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 78K |
| 代理商： | SIGC61T60NC |
SIGC61T60NC
Edited by INFINEON Technologies AI PS DD HV3, L 7452-M, Edition 2, 28.11.2003
MAXIMUM RATINGS:
Parameter
Symbol
Value
Unit
Collector-emitter voltage,
T
j=25
°
C
V
CE
600
V
DC collector current, limited by T
jmax
I
C
1 )
A
Pulsed collector current, t
p
limited by T
jmax
I
cpuls
225
A
Gate emitter voltage
V
GE
±
20
V
Operating junction and storage temperature
T
j
, T
stg
-55 ... +150
°C
1 )
depending on thermal properties of assembly
STATIC CHARACTERISTICS
(tested on chip),
T
j=25
°
C, unless otherwise specified:
Value
Parameter
Symbol
Conditions
min.
typ.
max.
Unit
Collector-emitter breakdown voltage
V
(BR)CES
V
GE
=0V, I
C
=3mA
600
Collector-emitter saturation voltage
V
CE(sat)
V
GE
=15V, I
C
=75A
1.7
2.1
2.5
Gate-emitter threshold voltage
V
GE(th)
I
C
=1.5mA, V
GE
=V
CE
4.5
5.5
6.5
V
Zero gate voltage collector current
I
CES
V
CE
=600V, V
GE
=0V
5.2
μA
Gate-emitter leakage current
DYNAMIC CHARACTERISTICS
(tested at component):
I
GES
V
CE
=0V, V
GE
=20V
210
nA
Value
typ.
Parameter
Symbol
Conditions
min.
max.
Unit
Input capacitance
Output capacitance
Reverse transfer capacitance
SWITCHING CHARACTERISTICS
(tested at component)
,
Inductive Load:
C
iss
C
oss
C
rss
-
-
-
3300
tbd
300
-
-
-
V
CE
=25V
V
GE
=0V
f
=1MHz
pF
1)
values also influenced by parasitic L- and C- in measurement and package.
Value
typ.
Parameter
Symbol
Conditions
1)
min.
max.
Unit
Turn-on delay time
t
d(on)
-
65
-
Rise time
t
r
-
25
-
Turn-off delay time
t
d(off)
-
170
-
Fall time
t
f
T
j
=125
°
C
V
CC
=300V
I
C
=75A
V
GE
=
±
15V
R
G
=3
-
35
-
ns
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