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參數(shù)資料
| 型號： | SIHF640L-E3 |
| 廠商： | VISHAY SILICONIX |
| 元件分類： | JFETs |
| 英文描述： | 18 A, 200 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA |
| 封裝： | ROHS COMPLIANT, TO-262, I2PAK-3 |
| 文件頁數(shù)： | 7/9頁 |
| 文件大?。?/td> | 170K |
| 代理商： | SIHF640L-E3 |
Document Number: 91037
S11-1047-Rev. C, 30-May-11
www.vishay.com
7
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc91000
IRF640S, IRF640L, SiHF640S, SiHF640L
Vishay Siliconix
Fig. 14 - For N-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see
http://www.vishay.com/ppg91037
.
P.W.
Period
dI/dt
Diode recovery
dV/dt
Ripple
≤
5 %
Body diode forward drop
Re-applied
voltage
Rever
s
e
recovery
current
Body diode forward
current
V
GS
= 10 V
a
I
S
D
Driver gate drive
D.U.T. l
S
D
waveform
D.U.T. V
D
S
waveform
Inductor current
D =
P.W.
Period
+
-
+
+
+
-
-
-
Peak Dio
d
e Recovery
d
V/
d
t Test Circuit
V
DD
dV/dt controlled by R
g
Driver
s
ame type a
s
D.U.T.
I
S
D
controlled by duty factor “D”
D.U.T. - device under te
s
t
D.U.T.
Circuit layout con
s
ideration
s
Low
s
tray inductance
G
round plane
Low leakage inductance
current tran
s
former
R
g
Note
a. V
GS
= 5 V for logic level device
s
V
DD
相關PDF資料 |
PDF描述 |
|---|---|
| SIHF640STR-E3 | 18 A, 200 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| SIHF730S-E3 | 5.5 A, 400 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET |
| SIHF830-E3 | 4.5 A, 500 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| SIHFP260-E3 | 46 A, 200 V, 0.055 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| SIHFR120T | 7.7 A, 100 V, 0.27 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
相關代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SIHF640S | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Power MOSFET |
| SIHF640S-E3 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Power MOSFET |
| SIHF640STL | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Power MOSFET |
| SIHF640STR | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Power MOSFET |
| SIHF640STR-E3 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Power MOSFET |
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