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參數(shù)資料
| 型號： | SIHFZ48 |
| 廠商： | VISHAY SILICONIX |
| 元件分類： | JFETs |
| 英文描述： | 50 A, 60 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | TO-220, 3 PIN |
| 文件頁數(shù)： | 1/9頁 |
| 文件大?。?/td> | 1515K |
| 代理商： | SIHFZ48 |
Document Number: 91294
S11-0518-Rev. B, 21-Mar-11
www.vishay.com
1
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc91000
Power MOSFET
IRFZ48, SiHFZ48
Vishay Siliconix
FEATURES
Dynamic dV/dt Rating
Repetitive Avalanche Rated
Ultra Low On-Resistance
Very Low Thermal Resistance
175 °C Operating Temperature
Fast Switching
Ease of Paralleling
Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized
device
design,
cost-effectiveness.
The TO-220AB package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220AB contribute to its
wide acceptance throughout the industry.
low
on-resistance
and
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
DD
= 25 V, starting T
= 25 °C, L = 22 μH, R
= 25
Ω
I
AS
= 72 A (see fig. 12).
c. I
≤
72 A, dI/dt
≤
200 A/μs, V
DD
≤
V
DS
, T
J
≤
175 °C.
d. 1.6 mm from case
e. Current limited by the package, (die current = 72 A).
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
(
Ω
)
Q
g
(Max.) (nC)
Q
gs
(nC)
Q
gd
(nC)
Configuration
60
V
GS
= 10 V
0.018
110
29
36
Single
N-Channel MOSFET
G
D
S
TO-220AB
G
D
S
Available
RoHS*
COMPLIANT
ORDERING INFORMATION
Package
TO-220AB
IRFZ48PbF
SiHFZ48-E3
IRFZ48
SiHFZ48
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
SYMBOL
V
DS
V
GS
LIMIT
60
± 20
50
50
290
1.3
100
50
19
190
4.5
UNIT
V
Continuous Drain Current
e
V
GS
at 10 V
T
C
= 25 °C
T
C
= 100 °C
I
D
A
Pulsed Drain Current
a
Linear Derating Factor
Single Pulse Avalanche Energy
b
Avalanche Current
a
Repetitive Avalanche Energy
a
Maximum Power Dissipation
Peak Diode Recovery dV/dt
c
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
d
I
DM
W/°C
mJ
A
mJ
W
V/ns
E
AS
I
AR
E
AR
P
D
dV/dt
T
J
, T
stg
T
C
= 25 °C
- 55 to + 175
300
10
1.1
°C
for 10 s
Mounting Torque
6-32 or M3 screw
lbf · in
N · m
* Pb containing terminations are not RoHS compliant, exemptions may apply
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相關(guān)代理商/技術(shù)參數(shù) |
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| SIHFZ48-E3 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Power MOSFET |
| SIHFZ48L | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Power MOSFET |
| SIHFZ48L-E3 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Power MOSFET |
| SIHFZ48R | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Power MOSFET |
| SIHFZ48R-E3 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Power MOSFET |
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