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參數(shù)資料
| 型號： | SKCD20C120I4 |
| 廠商： | SEMIKRON INTERNATIONAL |
| 元件分類： | 整流器 |
| 英文描述： | 21 A, 1200 V, SILICON, RECTIFIER DIODE |
| 封裝： | 4.47 X 4.47 MM, DIE-2 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 190K |
| 代理商： | SKCD20C120I4 |
SKCD 20 C 120 I4
by SEMIKRON
Rev. 1 – 19.02.2010
1
CAL-DIODE
SKCD
IF = 35 A
VRRM = 1200 V
Size: 4,47 mm x 4,47 mm
SKCD 20 C 120 I4
Features
max. junction 175 °C
very low forward voltage drop
positive temperature coefficient
extreme soft recovery
Typical Applications*
freewheeling diode for IGBT
Absolute Maximum Ratings
Symbol
Conditions
Values
Unit
VRRM
Tj =25°C, IR =0.06mA
1200
V
IF(AV)
Tc =80°C, Tj = 175 °C, Fi=PI/2
21
A
IFSM
10 ms
sin 180°
Tj =25°C
170
A
Tj = 150 °C
170
A
Tjmax
175
°C
Electrical Characteristics
Symbol
Conditions
min.
typ.
max.
Unit
i2t
Tj = 150 °C, sin 180°, 10 ms
145
A2s
IR
Tj =25°C, VRRM = 1200 V
0.06
mA
Tj = 150 °C, VRRM =1200V
2.70
5.50
mA
VF
Tj =25°C, IF =35A
2.30
2.62
V
Tj = 150 °C, IF =35A
2.29
2.62
V
Tj = 175 °C, IF =35A
2.14
2.46
V
V(TO)
Tj = 150 °C
0.90
1.10
V
rT
Tj = 150 °C
39.8
43.40
m
V(TO)
Tj = 175 °C
0.82
0.98
V
rT
Tj = 175 °C
37.80
42.40
m
Dynamic Characteristics
Symbol
Conditions
min.
typ.
max.
Unit
trr
Tj = 150 °C, 35 A, 600 V, 600 A/s
0.59
s
Err
Tj = 150 °C, 35 A, 600 V, 600 A/s
1.6
mJ
Irrm
Tj = 150 °C, 35 A, 600 V, 600 A/s
22.8
A
Thermal Characteristics
Symbol
Conditions
min.
typ.
max.
Unit
Tj
-40
175
°C
Tstg
-40
175
°C
Tsolder
10 min.
250
°C
Tsolder
5 min.
320
°C
Rth(j-c)
Semitrans Assembly
1.48
K/W
Mechanical Characteristics
Symbol
Conditions
Values
Unit
Raster
size
4.47 x 4.47
mm2
Area total
20
mm2
Anode
Metallization
bondable (Al)
Cathode
Metallization
solderable (Ag/Ni)
Wire bond
Al, typ. diameter = 300 m
Package
wafer frame
Chips /
Package
746
pcs
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