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參數(shù)資料
| 型號： | SL12-M3/61T |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 整流器 |
| 英文描述： | 1.5 A, 20 V, SILICON, RECTIFIER DIODE, DO-214AC |
| 封裝： | HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, SMA, 2 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 73K |
| 代理商： | SL12-M3/61T |
Document Number: 89408
For technical questions within your region, please contact one of the following:
www.vishay.com
Revision: 19-Apr-11
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Low VF Surface Mount Schottky Rectifier
SL12, SL13
Vishay General Semiconductor
New Product
FEATURES
Low profile package
Ideal for automated placement
Guardring for overvoltage protection
Low power losses, high efficiency
Very low forward voltage drop
High surge capability
Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
Compliant
to
RoHS
Directive
2002/95/EC
and
in
accordance to WEEE 2002/96/EC
Halogen-free according to IEC 61249-2-21 definition
TYPICAL APPLICATIONS
For
use
in
low
voltage,
high
frequency
inverters,
freewheeling, DC/DC converters, and polarity protection
applications.
MECHANICAL DATA
Case: DO-214AC (SMA)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS compliant, and
commercial grade
Terminals:
Matte
tin
plated
leads,
solderable
per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
Polarity: Color band denotes the cathode end
PRIMARY CHARACTERISTICS
IF(AV)
1.5 A
VRRM
20 V, 30 V
IFSM
50 A
VF
0.34 V
TJ max.
125 °C
DO-214AC (SMA)
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
SL12
SL13
UNIT
Device marking code
SL2
SL3
Maximum repetitive peak reverse voltage
VRRM
20
30
V
Maximum RMS voltage
VRMS
14
21
V
Maximum DC blocking voltage
VDC
20
30
V
Maximum average forward rectified current at TL = 105 °C (fig. 1)
IF(AV)
1.5
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
50
A
Voltage rate of change (rated VR)
dV/dt
10 000
V/μs
Operating junction temperature range
TJ
- 55 to + 125
°C
Storage temperature range
TSTG
- 55 to + 150
°C
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