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參數(shù)資料
| 型號(hào)： | SLR-50HF1 |
| 元件分類： | 光敏三極管 |
| 英文描述： | PHOTO DARLINGTON DETECTOR |
| 封裝： | HERMETICALLY SEALED, TO-18, 2 PIN |
| 文件頁(yè)數(shù)： | 1/1頁(yè) |
| 文件大小： | 33K |
| 代理商： | SLR-50HF1 |
5200 St. Patrick St., Montreal
The Old Railway, Princes Street
Que., H4E 4N9, Canada
Ulverston, Cumbria, LA12 7NQ, UK
Tel: 514-768-8000
Tel: 01 229 581 551
Fax: 514-768-8889
Fax: 01 229 581 554
QF-84
SLR-50HF Series
NPN Photodarlington
Features
Wide receiving angle
TO-18 hermetic flat window
Multiple sensitivity ranges
Extended temperature range
Description
The SLR-50HF series consists of an NPN silicon
planar photodarlington transistor mounted in a
hermetically sealed TO-18 flat window package. The
wide
angle
of
receiving
sensitivity
provides
a
relatively uniform output over a wide field of view.
The first stage base lead is connected for those
applications where switching control and circuitry
biasing is needed. The TO-18 hermetic package
provides high reliability in hostile environments. The
various sensitivity ranges available provide the
desired output to meet multiple application demands.
Absolute Maximum Ratings
Storage Temperature Range
-65
°C to +150°C
Operating Temperature Range
-55
°C to +125°C
Soldering Temperature (1)
260
°C
Power Dissipation @ 25
°C (2)
250mW
Collector
Base
Emitter
Dimensions in mm. (+/- 0.13)
5.1
1.3
12 min.
2.5
4.70
45
0.41 - 0.48
0.8
100°
90°
80°
70°
60°
50°
1.0
40°
30°
20°
10°
Half Angle = 40°
Directional Sensitivity Characteristics
20°
40°
60°
80°
100°
120°
0.0
0.2
0.4
0.6
0.8
0.4
0.6
0.8
1.0
Notes: (1) >2 mm from case for <5 sec.
(2) Derate @ 2.5mW/
°C above 25°C.
(3) Ee = source @
λ = 2854 °K.
(4) Ee = source @
λ = 880 nm
Electrical Characteristics (TA=25
°C unless otherwise noted)
Symbol
Parameter
Min
Typ Max
Units
Test Conditions
IC(ON)
On-State Collector Current:
SLR-50HF1 0.6
mA
VCE=5V, Ee=2mW/cm
2 (3)
SLR-50HF2 2.0
mA
VCE=5V, Ee=2mW/cm
2 (3)
SLR-50HF3 4.0
mA
VCE=5V, Ee=2mW/cm
2 (3)
SLR-50HF4 8.0
mA
VCE=5V, Ee=2mW/cm
2 (3)
ICEO
Collector Dark Current
100
nA
VCE=10V, Ee=0
BVCEO
Collector-Emitter Breakdown Voltage
40
V
IC=100
A, Ee=0
BVCBO
Collector-Base Breakdown Voltage
60
V
IC=100
A, Ee=0
BVECO
Emitter-Collector Breakdown Voltage
10
V
IC=100
A, Ee=0
VCE(SAT)
Collector to Emitter Saturation Voltage
1.2
V
IC=0.5mA, Ee =2mW/cm
2 (3)
tr, tf
Rise Time, Fall Time
75
S
RL=100
, I
C=0.50mA, VCC=5V (4)
λ
P
Maximum Sensitivity Wavelength
930
nm
λ
R
Sensitivity Spectral Range
400
1100
nm
θ
1/2
Acceptance Half Angle
40
deg
(off center-line)
Specifications subject to change without notice.
102898 REV 2
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