參數(shù)資料
型號(hào): SM15T200CA-E3/51T
廠商: VISHAY SEMICONDUCTORS
元件分類: TVS二極管 - 瞬態(tài)電壓抑制
英文描述: 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB
封裝: ROHS COMPLIANT, PLASTIC, SMC, 2 PIN
文件頁數(shù): 1/5頁
文件大?。?/td> 100K
代理商: SM15T200CA-E3/51T
Vishay General Semiconductor
SM15T Series
Document Number 88380
05-Sep-06
www.vishay.com
1
Surface Mount TRANSZORB Transient Voltage Suppressors
FEATURES
Low profile package
Ideal for automated placement
Glass passivated chip junction
1500 W peak pulse power capability with a
10/1000 s waveform
Available in Unidirectional and Bidirectional
Excellent clamping capability
Low inductance
Meets MSL level 1, per J-STD-020C, LF max peak
of 260 °C
Solder Dip 260 °C, 40 seconds
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
APPLICATION NOTES
A 1500 W (SMC) device is normally selected when the
threat of transients is from lightning induced transients,
conducted via external leads or I/O lines. It is also used
to protect against switching transients induced by
large coils or industrial motors. Source impedance at
component level in a system is usually high enough to
limit the current within the peak pulse current (IPP)
rating of this series. In an overstress condition, the
failure mode is a short circuit.
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and
lighting on ICs, MOSFET, signal lines of sensor units
for consumer, computer, industrial, automotive and
telecommunication.
DO-214AB (SMC)
MECHANICAL DATA
Case: DO-214AB (SMC)
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade, HE3 suffix for high
reliability grade (AEC Q101 qualified)
Polarity: For unidirectional types the band denotes
cathode end, no marking on bidirectional types
DEVICES FOR BIDIRECTION APPLICATIONS
For bidirectional devices use CA suffix (e.g. SM15T12CA).
Electrical characteristics apply in both directions.
MAJOR RATINGS AND CHARACTERISTICS
V(BR)
6.8 V to 220 V
PPPM
1500 W
PD
6.5 W
IFSM (Unidirectional only)
200 A
Tj max.
150 °C
Note:
(1) Non-repetitive current pulse, per Fig. 3 and derated above TA = 25 °C per Fig. 2
(2) Mounted on 0.31 x 0.31" (8.0 x 8.0 mm) copper pads to each terminal
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
UNIT
Peak pulse power dissipation with a 10/1000 s waveform (1,2) (see Fig. 1)
PPPM
Minimum 1500
W
Peak power pulse current with a 10/1000 s waveform (1) (see Fig. 3)
IPPM
see next table
A
Power dissipation on infinite heatsink TA = 50 °C
PD
6.5
W
Peak forward surge current 10 ms single half sine-wave uni-directional only (2)
IFSM
200
A
Operating junction and storage temperature range
TJ, TSTG
- 65 to + 150
°C
相關(guān)PDF資料
PDF描述
SM15T200CA-E3/59T 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB
SM15T22A-E3/51T 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB
SM15T18A UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB
SM15T39CA BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB
SM15T12A UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB
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