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參數(shù)資料
| 型號(hào)： | SM4T35CAY |
| 廠商： | STMICROELECTRONICS |
| 元件分類(lèi)： | TVS二極管 - 瞬態(tài)電壓抑制 |
| 英文描述： | 400 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AC |
| 封裝： | ROHS COMPLIANT, PLASTIC, SMA, 2 PIN |
| 文件頁(yè)數(shù)： | 5/12頁(yè) |
| 文件大?。?/td> | 171K |
| 代理商： | SM4T35CAY |
Characteristics
SM4TY
2/12
Doc ID 17862 Rev 1
1
Characteristics
Figure 1.
Electrical characteristics - definitions
Figure 2.
Pulse definition for electrical characteristics
Table 1.
Absolute maximum ratings (Tamb = 25 °C)
Symbol
Parameter
Value
Unit
VPP
Peak pulse voltage
ISO 10605 (C = 330 pF, R = 330
Ω)
Contact discharge
Air discharge
IEC 61000-4-2
Contact discharge
Air discharge
30
kV
PPP
Peak pulse power dissipation(1)
Tj initial = Tamb
400
W
Tstg
Storage temperature range
-65 to + 150
°C
Tj
Operating junction temperature range
-55 to + 150
°C
TL
Maximum lead temperature for soldering during 10 s.
260
°C
1.
For a surge greater than the maximum values, the diode will fail in short-circuit.
Table 2.
Thermal parameter
Symbol
Parameter
Value
Unit
Rth(j-l)
Junction to leads
30
°C/W
Rth(j-a)
Junction to ambient on printed circuit on recommended pad layout
120
°C/W
V
CLVBR VRM
I
RM
I
R
I
PP
V
I
RM
I
R
I
PP
V
RMVBR VCL
V
CLVBR VRM
I
RM
I
R
I
PP
V
I
RM
I
R
I
PP
V
RMVBR VCL
V
CL VBR VRM
I
RM
I
R
I
PP
V
I
F
V
F
V
CL VBR VRM
I
RM
I
R
I
PP
V
I
F
V
F
Unidirectional
Bidirectional
Symbol Parameter
V
Stand-off voltage
V
Breakdown voltage
V
Clamping voltage
I
Leakage current @ V
I
Peak pulse current
T
Voltage temperature coefficient
V
Forward voltage drop
R
Dynamic resistance
RM
BR
CL
RM
PP
F
D
α
100
50
0
Pulse waveform
tr = rise time (s)
tp = pulse duration time (s)
t
%IPP
tp
tr
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| SM4T36 | 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:TRANSIL |
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| SM4T36CA | 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:TRANSIL |
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