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參數(shù)資料
| 型號： | SM5010AN1S |
| 廠商： | Seiko NPC Corporation |
| 英文描述： | Crystal Oscillator Module ICs |
| 中文描述： | 晶體振蕩器模塊集成電路 |
| 文件頁數(shù)： | 5/14頁 |
| 文件大小： | 156K |
| 代理商： | SM5010AN1S |
pemnr
SM5010 series
NIPPON PRECISION CIRCUITS—5
Electrical Characteristics
5010
×
N
×
series
3 V operation: V
DD
= 2.7 to 3.6 V, V
SS
= 0 V, Ta =
10 to 70
°
C unless otherwise noted.
5010
×
N
×
,
×
K
×
series
5 V operation: V
DD
= 4.5 to 5.5 V, V
SS
= 0 V, Ta =
40 to 85
°
C unless otherwise noted.
Rating
Unit
min
typ
max
HIGH-level output voltage
V
OH
V
OL
Q: Measurement cct 1, V
DD
= 2.7 V, I
OH
= 8 mA
Q: Measurement cct 2, V
DD
= 2.7 V, I
OL
= 8 mA
Q: Measurement cct 2, INH = LOW, V
DD
= 3.6 V, V
OH
= V
DD
Q: Measurement cct 2, INH = LOW, V
DD
= 3.6 V, V
OL
= V
SS
INH
2.1
2.4
–
V
LOW-level output voltage
–
0.3
0.4
V
Output leakage current
I
Z
–
–
10
μA
–
–
10
HIGH-level input voltage
V
IH
V
IL
2.0
–
–
V
LOW-level input voltage
INH
–
–
0.5
V
Current consumption
I
DD
Measurement cct 3, load cct 1,
INH = open, C
L
= 15 pF, f = 30 MHz
5010
×
N1
5010
×
N2
5010
×
N3
5010
×
N4
TBD
mA
INH pull-up resistance
R
UP1
R
f
Measurement cct 4
–
100
–
k
k
Feedback resistance
Measurement cct 5
–
200
–
Oscillator amplifier output
resistance
R
D
Design value
5010B
××
–
820
–
Built-in capacitance
C
G
C
D
Design value, determined by the internal
wafer pattern
5010A
××
, 5010B
××
TBD
pF
pF
Parameter
Symbol
Condition
Rating
Unit
min
typ
max
HIGH-level output voltage
V
OH
V
OL
Q: Measurement cct 1, V
DD
= 4.5 V, I
OH
= 16 mA
Q: Measurement cct 2, V
DD
= 4.5 V, I
OL
= 16 mA
Q: Measurement cct 2, INH = LOW, V
DD
= 5.5 V, V
OH
= V
DD
Q: Measurement cct 2, INH = LOW, V
DD
= 5.5 V, V
OL
= V
SS
INH
3.9
4.2
–
V
LOW-level output voltage
–
0.3
0.4
V
Output leakage current
I
Z
–
–
10
μA
–
–
10
HIGH-level input voltage
V
IH
V
IL
2.0
–
–
V
LOW-level input voltage
INH
–
–
0.8
V
Current consumption
I
DD
Measurement cct 3, load cct 2,
INH = open, C
L
= 50 pF, f = 30 MHz
5010
×
N1
5010
×
N2
5010
×
N3
5010
×
N4
TBD
mA
Measurement cct 3, load cct 1,
INH = open, C
L
= 15 pF, f = 30 MHz
Measurement cct 4
5010
×
K
×
INH pull-up resistance
R
UP1
R
f
–
100
–
k
k
Feedback resistance
Measurement cct 5
–
200
–
Oscillator amplifier output
resistance
R
D
Design value
5010B
××
–
820
–
Built-in capacitance
C
G
C
D
Design value, determined by the internal
wafer pattern
5010A
××
, 5010B
××
TBD
pF
pF
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