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參數(shù)資料
| 型號(hào)： | SM5022A7H |
| 廠商： | Seiko NPC Corporation |
| 英文描述： | OSC 5V 14PIN CMOS |
| 中文描述： | 晶體振蕩器模塊集成電路 |
| 文件頁(yè)數(shù)： | 5/10頁(yè) |
| 文件大?。?/td> | 104K |
| 代理商： | SM5022A7H |
pemnr
SM5022 series
NIPPON PRECISION CIRCUITS—5
Electrical Characteristics
3 V operation: A
×
series
V
DD
= 2.7 to 3.6 V, V
SS
= 0 V, Ta =
20 to 80
°
C unless otherwise noted.
5 V operation: A
×
series/ B
×
series
V
DD
= 4.5 to 5.5 V, V
SS
= 0 V, Ta =
20 to 80
°
C unless otherwise noted.
Parameter
Symbol
Condition
Rating
Unit
min
typ
max
HIGH-level output voltage
V
OH
Q: Measurement cct 1, V
DD
= 2.7 V, I
OH
= 4 mA
2.1
2.4
–
V
LOW-level output voltage
V
OL
Q: Measurement cct 2, V
DD
= 2.7 V, I
OL
= 4 mA
–
0.3
0.4
V
Output leakage current
I
Z
Q: Measurement cct 2, V
DD
= 3.6 V, INH = LOW, V
OH
= V
DD
–
–
10
μA
Q: Measurement cct 2, V
DD
= 3.6 V, INH = LOW, V
OL
= V
SS
–
–
10
HIGH-level input voltage
V
IH
INH
2.0
–
–
V
LOW-level input voltage
V
IL
INH
–
–
0.5
V
Current consumption
I
DD
INH = open, Measurement cct 3, load cct 1, C
30 MHz crystal oscillator
L
= 15 pF,
–
4
7
mA
INH pull-up resistance
R
UP
Measurement cct 4
25
100
250
k
Feedback resistance
R
f
Measurement cct 5
200
600
1000
k
Built-in capacitance
C
G
Design value, determined by the
internal wafer pattern
SM5022A1H, CF5022A1
SM5022A3H, CF5022A3
SM5022A5H, CF5022A5
SM5022A7H, CF5022A7
7.44
8
8.56
pF
C
D
9.3
10
10.7
pF
Parameter
Symbol
Condition
Rating
Unit
min
typ
max
HIGH-level output voltage
V
OH
Q: Measurement cct 1, V
DD
= 4.5 V, I
OH
= 8 mA
3.9
4.2
–
V
LOW-level output voltage
V
OL
Q: Measurement cct 2, V
DD
= 4.5 V, I
OL
= 8 mA
–
0.3
0.4
V
Output leakage current
I
Z
Q: Measurement cct 2, V
DD
= 5.5 V, INH = LOW, V
OH
= V
DD
–
–
10
μA
Q: Measurement cct 2, V
DD
= 5.5 V, INH = LOW, V
OL
= V
SS
–
–
10
HIGH-level input voltage
V
IH
INH
2.0
–
–
V
LOW-level input voltage
V
IL
INH
–
–
0.8
V
Current consumption
I
DD
INH = open, Measurement cct 3,
load cct 1, C
L
30 MHz crystal oscillator
= 15 pF,
SM5022A
×
H, CF5022A
×
–
7
12
mA
INH = open, Measurement cct 3,
load cct 2, C
L
30 MHz crystal oscillator
= 15 pF,
SM5022B
×
H, CF5022B
×
–
7
12
INH pull-up resistance
R
UP
Measurement cct 4
25
100
250
k
Feedback resistance
R
f
Measurement cct 5
200
600
1000
k
Built-in capacitance
C
G
Design value, determined by the
internal wafer pattern
SM5022A1H, CF5022A1
SM5022A3H, CF5022A3
SM5022A5H, CF5022A5
SM5022A7H, CF5022A7
SM5022B1H, CF5022B1
7.44
8
8.56
pF
C
D
9.3
10
10.7
pF
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