
SM5024 series
NIPPON PRECISION CIRCUITS INC.—5
Electrical Characteristics
3V operation
V
SS
= 0V, recommended operating conditions unless otherwise noted.
5V operation
V
SS
= 0V, recommended operating conditions unless otherwise noted.
Parameter
Symbol
Condition
Rating
Unit
min
typ
max
HIGH-level output voltage
V
OH
Q: Measurement cct 1, V
DD
= 2.7V I
OH
= 8mA
2.1
2.4
–
V
LOW-level output voltage
V
OL
Q: Measurement cct 2, V
DD
= 2.7V I
OL
= 8mA
–
0.3
0.5
V
HIGH-level input voltage
V
IH
INHN
2.0
–
–
V
LOW-level input voltage
V
IL
INHN
–
–
0.5
V
Output leakage current
I
Z
Q: Measurement cct 2, INHN = LOW
V
DD
= 3.6V
V
OH
= V
DD
–
–
10
μA
V
OL
= V
SS
–
–
10
μA
Current consumption
I
DD1
Measurement cct 3, load cct 1,
INHN = open, C
L
= 15pF f = 30MHz
SM5024AL1H
–
4
8
mA
SM5024AL2H
–
2.5
5
mA
SM5024AL3H
–
2
4
mA
SM5024AL4H
–
1.5
3
mA
INHN pull-up resistance
R
UP
Measurement cct 4
25
100
250
k
Feedback resistance
R
f
Measurement cct 5
200
600
1000
k
Built-in capacitance
C
G
Design value. A monitor pattern on a wafer is tested.
7.44
8
8.56
pF
C
D
9.3
10
10.7
pF
Parameter
Symbol
Condition
Rating
Unit
min
typ
max
HIGH-level output voltage
V
OH
Q: Measurement cct 1, V
DD
= 4.5V I
OH
= 16mA
3.9
4.2
–
V
LOW-level output voltage
V
OL
Q: Measurement cct 2, V
DD
= 4.5V I
OL
= 16mA
–
0.3
0.5
V
HIGH-level input voltage
V
IH
INHN
2.0
–
–
V
LOW-level input voltage
V
IL
INHN
–
–
0.8
V
Output leakage current
I
Z
Q: Measurement cct 2, INHN = LOW
V
DD
= 5.5V
V
OH
= V
DD
–
–
10
μA
V
OL
= V
SS
–
–
10
μA
Current consumption
I
DD2
Measurement cct 3, load cct 1,
INHN = open, C
L
= 50pF f = 30MHz
SM5024AL1H
–
13
26
mA
SM5024AL2H
–
7
14
mA
SM5024AL3H
–
4
8
mA
SM5024AL4H
–
3
6
mA
INHN pull-up resistance
R
UP
Measurement cct 4
25
100
250
k
Feedback resistance
R
f
Measurement cct 5
200
600
1000
k
Built-in capacitance
C
G
Design value. A monitor pattern on a wafer is tested.
7.44
8
8.56
pF
C
D
9.3
10
10.7
pF