參數(shù)資料
型號(hào)： SM646HRK
廠商： MICROSEMI CORP-ANALOG MIXED SIGNAL GROUP
元件分類： 模擬信號(hào)調(diào)理
英文描述： RADIATION HARDENED HIGH EFFICIENCY, 5 AMP SWITCHING REGULATORS
中文描述： SPECIALTY ANALOG CIRCUIT, MBCY4
封裝： TO-3, 4 PIN
文件頁(yè)數(shù)： 2/4頁(yè)
文件大?。?/td> 56K
代理商： SM646HRK
SM645/SM646/SM647
4/90 Rev 1.1 2/94
Copyright
1994
L
IN
F
IN
ITY
Microelectronics Inc.
11861 Western Avenue
∞
∞
Garden Grove, CA 92841
(714) 898-8121
∞
FAX: (714) 893-2570
2
ABSOLUTE MAXIMUM RATINGS
(Note 1)
150
°
C
-65
°
C to 150
°
C
300
°
C
Operating Junction Temperature
Hermetic (K Package) ..................................................
Storage Temperature Range .............................
Lead Temperature (Soldering, 10 Seconds) ...................
2.0
°
C/W
2.0
°
C/W
30.0
°
C/W
Thermal Resistance
Power Switch,
θ
...................................................
Commutating Diode .................................................
Case to Ambient,
θ
C - A
............................................
Note 1. Exceeding these ratings could cause damage to the device.
K Package:
Thermal Resistance-
Junction to Case
,
θ
JC
.................. 2.0°C/W
Thermal Resistance-
Junction to Ambient
,
θ
JA
.............. 35°C/W
THERMAL DATA
Note A. Junction Temperature Calculation: T
= T
+ (P
x
θ
).
Note B. The above numbers for
θ
are maximums for the limiting
thermal resistance of the package in a standard mount-
ing configuration. The
θ
numbers are meant to be
guidelines for the thermal performance of the device/pc-
board system. All of the above assume no ambient
airflow.
Operating Ambient Temperature Range
SM6XXK .......................................................0
°
C to 70
°
C
SM6XXHRK............................................ -55
°
C to 125
°
C
Note 2. Range over which the device is functional.
RECOMMENDED OPERATING CONDITIONS
(Note 2)
ELECTRICAL CHARACTERISTICS
(Unless otherwise specified, these specifications apply for the operating ambient temperature of T
= 25
°
C. Low duty cycle pulse testing tech-
niques are used which maintains junction and case temperatures equal to the ambient temperature.)
I
4
= 7A(-7A), I
= -30mA(30mA)
I
4
= 15A(-15A), I
3
= -30mA(30mA)
I
4
= 7A(-7A)
I
4
= 15A(-15A)
V
4
= Rated input voltage
V
4
= Rated input voltage, T
A
= 125
°
C
V
1
= Rated output voltage
V
1
= Rated output voltage, T
A
= 125
°
C
On-State Voltage
(Note 3)
Diode Forward Voltage
(Note 3)
Off-State Current
Diode Reverse Current
Test Conditions
Parameter
Units
Note 3. Pulse test: Duration = 300
μ
s, Duty Cycle
≤
2%.
V
V
V
V
μ
A
μ
A
μ
A
μ
A
1.5
3.5
1.25
1.75
10
10
1.0
2.5
0.85
0.95
0.1
10
1.0
500
SG645/646/647
Min.
Typ. Max.
SM645
SM646
70V
70v
4V
13A
-0.3A
SM647
90V
90V
4V
13A
-0.3A
Input Voltage, V
.......................................... 50V
Output Voltage, V
.......................................
Drive Input Reverse Voltage, V
..................
Output Current, I
...........................................
Drive Current, I
3
.............................................. -0.3A
50v
4V
13A
SM645
60V
60v
5V
15A
20A
-0.4A
SM646
80V
80v
5V
15A
20A
-0.4A
SM647
100V
100V
5V
15A
20A
-0.4A
Input Voltage, V
.........................................
Output Voltage, V
......................................
Drive Input Reverse Voltage, V
................
Continuous Output Current, I
.......................
Peak Output Current .....................................
Drive Current, I
3
............................................
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