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參數(shù)資料
| 型號： | SM6S16HE3/2D |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | TVS二極管 - 瞬態(tài)電壓抑制 |
| 英文描述： | 3600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-218AB |
| 封裝： | ROHS COMPLIANT, PLASTIC PACKAGE-1 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 81K |
| 代理商： | SM6S16HE3/2D |
Document Number: 88384
For technical questions within your region, please contact one of the following:
www.vishay.com
Revision: 18-Apr-11
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
194
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Surface Mount PAR Transient Voltage Suppressors
High Temperature Stability and High Reliability Conditions
SM6S10 thru SM6S36A
Vishay General Semiconductor
FEATURES
Junction passivation optimized design passivated
anisotropic rectifier technology
TJ = 175 °C capability suitable for high reliability
and automotive requirement
Available in uni-directional polarity only
Low leakage current
Low forward voltage drop
High surge capability
Meets ISO7637-2 surge specification (varied by test
condition)
Meets MSL level 1, per J-STD-020, LF maximum peak of
245 °C
AEC-Q101 qualified
Compliant
to
RoHS
Directive
2002/95/EC
and
in
accordance to WEEE 2002/96/EC
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and lighting,
especially for automotive load dump protection application.
MECHANICAL DATA
Case: DO-218AB
Molding compound meets UL 94 V-0 flammability rating
Base P/NHE3 - RoHS compliant, AEC-Q101 qualified
Terminals:
Matte
tin
plated
leads,
solderable
per
J-STD-002 and JESD 22-B102
HE3 suffix meets JESD 201 class 2 whisker test
Polarity: Heatsink is anode
Note
(1) Non-repetitive current pulse at TA = 25 °C
PRIMARY CHARACTERISTICS
VWM
10 V to 36 V
PPPM (10 x 1000 μs)
4600 W
PPPM (10 x 10 000 μs)
3600 W
PD
6 W
IFSM
600 A
TJ max.
175 °C
DO-218AB
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VALUE
UNIT
Peak pulse power dissipation
with 10/1000 μs waveform
PPPM
4600
W
with 10/10 000 μs waveform
3600
Power dissipation on infinite heatsink at TC = 25 °C (fig. 1)
PD
6.0
W
Peak pulse current with 10/1000 μs waveform
IPPM (1)
See next table
A
Peak forward surge current 8.3 ms single half sine-wave
IFSM
600
A
Operating junction and storage temperature range
TJ, TSTG
- 55 to + 175
°C
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| SM6S18HE3/2D | 3600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-218AB |
| SM6S20HE3/2D | 3600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-218AB |
| SM6S33HE3/2D | 3600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-218AB |
| SM6S36HE3/2D | 3600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-218AB |
| SM6S12HE3/2D | 3600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-218AB |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SM6S17 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Surface Mount Automotive Transient Voltage Suppressors |
| SM6S17A | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Surface Mount Automotive Transient Voltage Suppressors |
| SM6S17A/2D | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 4600W 17V Unidirect RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| SM6S17A-E3/2D | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 4600W 17V Unidirect RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| SM6S17AHE3/2D | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 6W 17V 5% Unidirect RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
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