參數(shù)資料
型號(hào)： SMA5J26C-E3/2G
廠商： VISHAY SEMICONDUCTORS
元件分類(lèi)： TVS二極管 - 瞬態(tài)電壓抑制
英文描述： 500 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AC
封裝： ROHS COMPLIANT, PLASTIC, SMA, 2 PIN
文件頁(yè)數(shù)： 1/6頁(yè)
文件大小： 101K
代理商： SMA5J26C-E3/2G
Vishay General Semiconductor
SMA5J5.0 thru SMA5J40CA
Document Number 88875
05-Sep-06
www.vishay.com
1
High Power Density Surface Mount TRANSZORB
Transient Voltage Suppressors
FEATURES
Low profile package
Ideal for automated placement
Glass passivated chip junction
Available in Unidirectional and Bidirectional
Excellent clamping capability
Very fast response time
Low incremental surge resistance
Meets MSL level 1, per J-STD-020C, LF max peak
of 260 °C
Solder Dip 260 °C, 40 seconds
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and
lighting on ICs, MOSFET, signal lines of sensor units
for consumer, computer, industrial, automotive and
telecommunication.
MECHANICAL DATA
Case: DO-214AC (SMA)
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade, HE3 suffix for high
reliability grade (AEC Q101 qualified)
Polarity: For unidirectional types the band denotes
cathode end, no marking on bidirectional types
DO-214AC (SMA)
DEVICES FOR BIDIRECTION APPLICATIONS
For
bidirectional
devices
use
C
or
CA
suffix
(e.g. SMA5J40CA).
Electrical characteristics apply in both directions.
MAJOR RATINGS AND CHARACTERISTICS
VWM
5.0 V to 40 V
PPPM
500 W
IFSM (Unidirectional only)
40 A
Tj max.
150 °C
Note:
(1) Non-repetitive current pulse, per Fig. 3 and derated above TA = 25 °C per Fig. 2.
(2) Mounted on 0.2 x 0.2" (5.0 x 5.0 mm) copper pads to each terminal
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VALUE
UNIT
Peak pulse power dissipation with a 10/1000 s waveform (1,2) (see Fig. 1)
PPPM
500
W
Peak pulse current with a 10/1000 s waveform (1)
IPPM
see next table
A
Peak forward surge current 8.3 ms single half sine-wave uni-directional only (2)
IFSM
40
A
Operating junction and storage temperature range
TJ, TSTG
- 55 to + 150
°C
相關(guān)PDF資料
PDF描述
SMA5J40C-E3/2G 500 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AC
SMA5J22A-E3/51 500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AC
SMA5J6.0A-E3/51 500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AC
SMA5J6.0C-E3/51 500 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AC
SMA5J8.0A-E3/2G 500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AC
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參數(shù)描述
SMA5J26CHE3/2G 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 500W 26V 10% Bidir RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C
SMA5J26CHE3/5A 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 500W 26V 10% Bidir RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C
SMA5J26CHE3/61 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 500W 26V 10% Bidir RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C
SMA5J26CHE3/63 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 500W 26V 10% Bidir RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C
SMA5J26-E3/2G 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 500W 26V Unidirect RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C
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