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參數(shù)資料
| 型號(hào)： | SMA6J26/51 |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | TVS二極管 - 瞬態(tài)電壓抑制 |
| 英文描述： | 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AC |
| 封裝： | PLASTIC, SMA, 2 PIN |
| 文件頁(yè)數(shù)： | 3/4頁(yè) |
| 文件大?。?/td> | 34K |
| 代理商： | SMA6J26/51 |
SMA6J5.0 thru 40A
Vishay Semiconductors
formerly General Semiconductor
Document Number 88389
www.vishay.com
07-May-02
3
Electrical Characteristics Ratings at 25°C ambient temperature unless otherwise specified.VF = 3.5V at IF = 25A (uni-directional only)
Device
Breakdown
Maximum
Device Type
Marking
Voltage
Test
Stand-off
Reverse Leakage Peak Pulse Surge
Clamping
Code
V(BR) (V)(1)
Current
Voltage
at VWM
Current IPPM
Voltage at IPPM
Min
Max
at IT (mA)
VWM (V)
ID (
A)
(A)(2)
VC (V)
SMA6J33
6CL
36.7
44.9
1.0
33
1.0
10.2
59.0
SMA6J33A
6CM
36.7
40.6
1.0
33
1.0
11.3
53.3
SMA6J36
6CN
40.0
48.9
1.0
36
1.0
9.3
64.3
SMA6J36A
6CP
40.0
44.2
1.0
36
1.0
10.3
58.1
SMA6J40
6CQ
44.4
54.3
1.0
40
1.0
8.4
71.4
SMA6J40A
6CR
44.4
49.1
1.0
40
1.0
9.3
64.5
Notes: (1) V(BR) measured after IT applied for 300
s square wave pulse or equivalent
(2) Surge current waveform per Fig. 3 and derate per Fig. 2
(3) All terms and symbols are consistent with ANSI/IEEE C62.35
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