參數(shù)資料
型號(hào): SMA6J8.0A-E3/5A
廠商: VISHAY SEMICONDUCTORS
元件分類: TVS二極管 - 瞬態(tài)電壓抑制
英文描述: 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AC
封裝: ROHS COMPLIANT, PLASTIC PACKAGE-2
文件頁數(shù): 1/5頁
文件大小: 88K
代理商: SMA6J8.0A-E3/5A
New Product
SMA6J5.0A thru SMA6J28A
Vishay General Semiconductor
Document Number: 89115
Revision: 30-Oct-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
Surface Mount Transient Voltage Suppressors
FEATURES
Low profile package
Ideal for automated placement
Available in uni-directional polarity only
Excellent clamping capability
Meets MSL level 1, per J-STD-020,
LF maximum peak of 260 °C
Solder dip 260 °C, 40 s
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and
lighting on ICs, MOSFET, signal lines of sensor units
for consumer, computer, industrial, automotive and
telecommunication.
MECHANICAL DATA
Case: DO-214AC (SMA)
Molding compound meets UL 94 V-0 flammability
rating
Base P/N-E3 - RoHS compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: Color band denotes cathode end
PRIMARY CHARACTERISTICS
VWM
5.0 V to 28 V
PPPM (10 x 1000 s)
600 W
PPPM (8 x 20 s)
4000 W
PD at TA = 50 °C
4 W
IFSM
50 A
TJ max.
150 °C
DO-214AC (SMA)
Notes:
(1) Non-repetitive current pulse, per Fig. 1 and derated above TA = 25 °C per Fig. 2.
(2) Mounted on P.C.B. with 5.0 x 5.0 mm copper pads attached to each terminal
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VALUE
UNIT
Peak pulse power dissipation
with 10/1000 s waveform (1)(2)
with 8/20 s waveform
PPPM
600
4000
W
Peak pulse current
with 10/1000 s waveform (1)(2)
with 8/20 s waveform
IPPM
See next table
A
Power dissipation on infinite heatsink, TA = 50 °C
PD
4.0
W
Peak forward surge current 8.3 ms single half sine-wave
IFSM
50
A
Operating junction and storage temperature range
TJ, TSTG
- 55 to + 150
°C
相關(guān)PDF資料
PDF描述
SMA6J8.0A-E3/61 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AC
SMA6J15A-E3/5A 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AC
SMA6J24A-E3/61 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AC
SMA6J5.0A-E3/61 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AC
SMA6J11A-E3/61 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AC
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