參數(shù)資料
型號(hào)： SMAJ350CAE3/TR13
廠商： MICROSEMI CORP
元件分類： TVS二極管 - 瞬態(tài)電壓抑制
英文描述： 400 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AC
封裝： ROHS COMPLIANT, PLASTIC, SMA, 2 PIN
文件頁(yè)數(shù)： 2/6頁(yè)
文件大小： 484K
代理商： SMAJ350CAE3/TR13
400W Transient Voltage Suppressor (TVS) protection device
www.Microsemi.com
2/6
Copyright
2010
Mar Rev C
SMAJ5.0e3 to SMAJ440CAe3
Electrical characteristics
(1)
Device
marking code
BREAKDOWN
VOLTAGE
(2), VBR
VBR (V) @ IT (mA)
DEVICE
UNI
BI
Min
Max
TEST
CURRENT IT
(mA)
STAND-OFF
VOLTAGE VWM
(V)
MAXIMUM
STANDBY
CURRENT
(4) ID
(A) @ VWM
MAXIMUM PEAK
PULSE
CURRENT
(3) IPP
(A)
MAXIMUM
CLAMPING
VOLTAGE VC (V)
@ IPP
SMAJ5.0e3 / SMAJ5.0Ce3
MAD
MWD
6.40
7.82
10
5.0
800
41.7
9.6
SMAJ5.0Ae3 / SMAJ5.0CAe3
(5)
MAE
MWE
6.40
7.07
10
5.0
800
43.5
9.2
SMAJ6.0e3 / SMAJ6.0Ce3
MAF
MWF
6.67
8.15
10
6.0
800
35.1
11.4
SMAJ6.0Ae3 / SMAJ6.0CAe3
MAG
MWG
6.67
7.37
10
6.0
800
38.8
10.3
SMAJ6.5e3 / SMAJ6.5Ce3
MAH
MWH
7.22
8.82
10
6.5
500
32.5
12.3
SMAJ6.5Ae3 / SMAJ6.5CAe3
MAK
MWK
7.22
7.98
10
6.5
500
35.7
11.2
SMAJ7.0e3 / SMAJ7.0Ce3
MAL
MWL
7.78
9.51
10
7.0
200
30.1
13.3
SMAJ7.0Ae3 / SMAJ7.0CAe3
MAM
MWM
7.78
8.60
10
7.0
200
33.3
12.0
SMAJ7.5e3 / SMAJ7.5Ce3
MAN
MWN
8.33
10.2
1.0
7.5
100
28.0
14.3
SMAJ7.5Ae3 / SMAJ7.5CAe3
MAP
MWP
8.33
9.21
1.0
7.5
100
31.0
12.9
SMAJ8.0e3 / SMAJ8.0Ce3
MAQ
MWQ
8.89
10.9
1.0
8.0
50
26.7
15.0
SMAJ8.0Ae3 / SMAJ8.0CAe3
MAR
MWR
8.89
9.83
1.0
8.0
50
29.4
13.6
SMAJ8.5e3 / SMAJ8.5Ce3
MAS
MWS
9.44
11.5
1.0
8.5
10
25.2
15.9
SMAJ8.5Ae3 / SMAJ8.5CAe3
MAT
MWT
9.44
10.4
1.0
8.5
10
27.8
14.4
SMAJ9.0e3 / SMAJ9.0Ce3
MAU
MWU
10.0
12.2
1.0
9.0
5.0
23.7
16.9
SMAJ9.0Ae3 / SMAJ9.0CAe3
MAV
MWV
10.0
11.1
1.0
9.0
5.0
26.0
15.4
SMAJ10e3 / SMAJ10Ce3
MAW
MWW
11.1
13.6
1.0
10
1.0
21.3
18.8
SMAJ10Ae3 / SMAJ10CAe3
MAX
MWX
11.1
12.3
1.0
10
1.0
23.5
17.0
SMAJ11e3 / SMAJ11Ce3
MAY
MWY
12.2
14.9
1.0
11
1.0
19.9
20.1
SMAJ11Ae3 / SMAJ11CAe3
MAZ
MWZ
12.2
13.5
1.0
11
1.0
22.0
18.2
SMAJ12e3 / SMAJ12Ce3
MBD
MXD
13.3
16.3
1.0
12
1.0
18.2
22.0
SMAJ12Ae3 / SMAJ12CAe3
MBE
MXE
13.3
14.7
1.0
12
1.0
20.1
19.9
SMAJ13e3 / SMAJ13Ce3
MBF
MXF
14.4
17.6
1.0
13
1.0
16.8
23.8
SMAJ13Ae3 / SMAJ13CAe3
MBG
MXG
14.4
15.9
1.0
13
1.0
18.6
21.5
SMAJ14e3 / SMAJ14Ce3
MBH
MXH
15.6
19.1
1.0
14
1.0
15.5
25.8
SMAJ14Ae3 / SMAJ14CAe3
MBK
MXK
15.6
17.2
1.0
14
1.0
17.2
23.2
SMAJ15e3 / SMAJ15Ce3
MBL
MXL
16.7
20.4
1.0
15
1.0
14.9
26.9
SMAJ15Ae3 / SMAJ15CAe3
MBM
MXM
16.7
18.5
1.0
15
1.0
16.4
24.4
SMAJ16e3 / SMAJ16Ce3
MBN
MXN
17.8
21.8
1.0
16
1.0
13.9
28.8
SMAJ16Ae3 / SMAJ16CAe3
MBP
MXP
17.8
19.7
1.0
16
1.0
15.4
26.0
SMAJ17e3 / SMAJ17Ce3
MBQ
MXQ
18.9
23.1
1.0
17
1.0
13.1
30.5
SMAJ17Ae3 / SMAJ17CAe3
MBR
MXR
18.9
20.9
1.0
17
1.0
14.5
27.6
SMAJ18e3 / SMAJ18Ce3
MBS
MXS
20.0
24.4
1.0
18
1.0
12.4
32.2
SMAJ18Ae3 / SMAJ18CAe3
MBT
MXT
20.0
22.1
1.0
18
1.0
13.7
29.2
SMAJ20e3 / SMAJ20Ce3
MBU
MXU
22.2
27.1
1.0
20
1.0
11.2
35.8
SMAJ20Ae3 / SMAJ20CAe3
MBV
MXV
22.2
24.5
1.0
20
1.0
12.3
32.4
SMAJ22e3 / SMAJ22Ce3
MBW
MXW
24.4
29.8
1.0
22
1.0
10.2
39.4
SMAJ22Ae3 / SMAJ22CAe3
MBX
MXX
24.4
26.9
1.0
22
1.0
11.3
35.5
(1) All ratings at 25C unless specified otherwise
(2) VBR measured after IT applied for 300s, IT=square wave pulse or equivalent
(3) Surge current waveform per Fig.3 and derated per Fig.2
(4) For bidrectional types with VWM of 10 volts and less, the ID limit is doubled
(5) For the bidirectional SMAJ5.0CA, the maximum VBR is 7.25V
相關(guān)PDF資料
PDF描述
SMAJ5.0E3/TR13 400 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AC
SMAJ10CE3/TR13 400 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AC
SMAJ10E3/TR13 400 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AC
SMAJ36AE3/TR13 400 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AC
SMAJ6.5CE3/TR13 400 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AC
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