參數(shù)資料
型號: SMAJ550/2G
廠商: VISHAY SEMICONDUCTORS
元件分類: TVS二極管 - 瞬態(tài)電壓抑制
英文描述: 300 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AC
文件頁數(shù): 2/2頁
文件大?。?/td> 44K
代理商: SMAJ550/2G
Application Notes
Respect Thermal Resistance (PCB Layout) – as the temperature coefficient also contributes to the clamping voltage.
Select minimum breakdown voltage, so you get acceptable power dissipation and PCB tie point temperature.
Devices with higher breakdown voltage will have a shorter conduction time and will dissipate less power.
Clamping voltage is influenced by internal resistance – design approximation is 7V per 100mA slope.
Keep temperature of TVS lower than TOPSwitch as a recommendation.
Maximum current is determined by the maximum TJ and can be higher than 300mA.
Contact supplier for different clamping voltage / current arrangements.
Minimum breakdown voltage can be customized for other applications. Contact supplier.
SMAJ530 and SMAJ550
Surface Mount TransZorb
TM
Transient Voltage Suppressors
0
25
50
75
100
0
75
25
50
100
125
150
175
P
eak
Pulse
P
o
w
er
(P
PP
)or
Current
(I
PP
)
Der
ating
in
P
ercentage
,%
TA – Ambient Temperature (
°C)
Fig. 2 – Pulse Derating Curve
P
PPM
P
eak
Pulse
P
o
w
er
(kW)
Fig. 1 – Peak Pulse Power Rating Curve
0.1
1
10
100
0.1
s
1.0
s10s
td – Pulse Width (sec.)
100
s
1.0ms
10ms
0
50
100
150
I PPM
P
eak
Pulse
Current,
%
I
RSM
Fig. 3 – Pulse Waveform
Pulse Width (td)
is defined as the point
where the peak current
decays to 50% of IPPM
tr = 10
sec.
Peak Value
IPPM
Half Value – IPP
2
td
10/1000
sec. Waveform
as defined by R.E.A.
0
1.0
2.0
3.0
4.0
t – Time (ms)
Non-repetitive Pulse
Waveform shown in Fig. 3
TA = 25°C
Ratings and
Characteristic Curves (TA = 25°C unless otherwise noted)
相關(guān)PDF資料
PDF描述
SMAJ550-E3 300 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AC
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