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參數(shù)資料
| 型號： | SMB10J13-E3 |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | TVS二極管 - 瞬態(tài)電壓抑制 |
| 英文描述： | 1000 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA |
| 封裝： | PLASTIC, SMB, 2 PIN |
| 文件頁數(shù)： | 3/7頁 |
| 文件大?。?/td> | 115K |
| 代理商： | SMB10J13-E3 |
SMB10J5.0 thru 40A and SMB8J5.0C thru 40CA
Vishay Semiconductors
formerly General Semiconductor
Document Number 88422
www.vishay.com
11-Mar-04
3
Unidirectional
Electrical Characteristics Ratings at 25°C ambient temperature unless otherwise specified. VF = 3.5V at IF = 50A (uni-directional only)
Breakdown
Maximum
Device Type
Device
Voltage
Test
Stand-off
Reverse Leakage Peak Pulse Surge
Clamping
Marking
V(BR) (V)(1)
Current
Voltage
at VWM
Current IPPM
Voltage at IPPM
Code
Min
Max
at IT (mA)
VWM (V)
ID (A)
(A)(2)
VC (V)
SMB10J33
1CL
36.7
44.9
1.0
33
1.0
16.9
59.0
SMB10J33A
1CM
36.7
40.6
1.0
33
1.0
18.8
53.3
SMB10J36
1CN
40.0
48.9
1.0
36
1.0
15.6
64.3
SMB10J36A
1CP
40.0
44.2
1.0
36
1.0
17.2
58.1
SMB10J40
1CQ
44.4
54.3
1.0
40
1.0
14.0
71.4
SMB10J40A
1CR
44.4
49.1
1.0
40
1.0
15.5
64.5
Notes: (1) V(BR) measured after IT applied for 300s square wave pulse or equivalent
(2) Surge current waveform per Fig. 3 and derate per Fig. 2
(3) All terms and symbols are consistent with ANSI/IEEE C62.35
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| SMB10J14-E3 | 1000 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA |
| SMB8J17C-E3 | 800 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA |
| SMB8J24C-E3 | 800 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SMB10J13-E3/2C | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 1000W 13V 10% Uni RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| SMB10J13-E3/51 | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 1000W 13V 10% Uni RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| SMB10J13-E3/52 | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 1000W 13V 10% Uni RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| SMB10J13-E3/55 | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 1000W 13V 10% Uni RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| SMB10J13-E3/5B | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 1000W 13V 10% Uni RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
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