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參數(shù)資料
| 型號(hào)： | SMB10J40A-E3 |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | TVS二極管 - 瞬態(tài)電壓抑制 |
| 英文描述： | 1000 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA |
| 封裝： | PLASTIC, SMB, 2 PIN |
| 文件頁(yè)數(shù)： | 1/7頁(yè) |
| 文件大小： | 115K |
| 代理商： | SMB10J40A-E3 |
SMB10J5.0 thru 40A and SMB8J5.0C thru 40CA
Vishay Semiconductors
formerly General Semiconductor
Document Number 88422
www.vishay.com
11-Mar-04
1
New Product
High Power Density Surface Mount TRANSZORB
Transient Voltage Suppressors
Stand-off Voltage 5.0 to 40V
Peak Pulse Power 1000W (unidirectional)
800W (bidirectional)
Devices for Bidirectional Applications
For bi-directional devices, use suffix C or CA (e.g. SMB8J10CA). Electrical characteristics apply in both directions.
Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.
Parameter
Symbol
Value
Unit
Peak pulse power dissipation with
unidirectional
PPPM
1000
W
a 10/1000s waveform
(1,2) (see fig. 1)
bidirectional
800
Peak pulse current with a 10/1000s waveform
(1)
IPPM
See Next Table
A
Peak forward surge current 8.3ms single half sine-wave
IFSM
100
A
uni-directional only(2)
Typical thermal resistance, junction to ambient(3)
RθJA
72
°C/W
Typical thermal resistance, junction to lead
RθJL
20
°C/W
Operating junction and storage temperature range
TJ, TSTG
–55 to +150
°C
Notes: (1) Non-repetitive current pulse, per Fig. 3 and derated above TA = 25°C per Fig. 2
(2) Mounted on 0.2 x 0.2” (5.0 x 5.0mm) copper pads to each terminal
(3) Mounted on minimum recommended pad layout
0.180 (4.57)
0.160 (4.06)
0.012 (0.305)
0.006 (0.152)
0.008
(0.203)
Max.
0.220 (5.59)
0.205 (5.21)
0.060 (1.52)
0.030 (0.76)
0.155 (3.94)
0.130 (3.30)
0.086 (2.20)
0.077 (1.95)
0.096 (2.44)
0.084 (2.13)
Cathode Band
Dimensions in inches
and (millimeters)
DO-214AA (SMB)
Features
1000W for unidirectional and 800W for bidirectional
peak pulse power capability with a 10/1000s
waveform, repetition rate (duty cycle): 0.01%
Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
Low profile package with built-in strain relief for
surface mounted applications
Glass passivated junction
Low incremental surge resistance,
excellent clamping capability
Very fast response time
Mechanical Data
Case: JEDEC DO-214AA molded plastic over
passivated chip
Terminals: Solder plated, solderable per MIL-STD-750,
Method 2026
High temperature soldering guaranteed:
250°C/10 seconds at terminals
Polarity: For uni-directional types the band denotes the
cathode, which is positive with respect to the anode
under normal TVS operation
Mounting Position: Any
Weight: 0.003oz., 0.093g
0.085 MAX
(2.16 MAX)
0.060 MIN
(1.52 MIN)
0.220 REF
0.086 MIN
(2.20 MIN)
Mounting Pad Layout
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SMB10J40A-E3/2C | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 1000W 40V 5% Uni RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| SMB10J40A-E3/51 | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 1000W 40V 5% Uni RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| SMB10J40A-E3/52 | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 1000W 40V 5% Uni RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| SMB10J40A-E3/55 | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 1000W 40V 5% Uni RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| SMB10J40A-E3/5B | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 1000W 40V 5% Uni RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
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