參數(shù)資料
型號(hào): SMBD6100
廠(chǎng)商: SIEMENS A G
元件分類(lèi): 參考電壓二極管
英文描述: Silicon Switching Diode Array
中文描述: 0.25 A, 2 ELEMENT, SILICON, SIGNAL DIODE
文件頁(yè)數(shù): 2/4頁(yè)
文件大?。?/td> 99K
代理商: SMBD6100
SMBD 6100
Semiconductor Group
2
Electrical Characteristics
at
T
A
= 25 C, unless otherwise specified.
Test circuit for reverse recovery time
Pulse generator:
t
p
= 100 ns,
D
= 0.05
t
r
= 0.6 ns,
R
j
= 50
Oscillograph:
R
= 50
t
r
= 0.35 ns
C
1 pF
Unit
Values
typ.
Parameter
Symbol
min.
max.
DC characteristics
V
Breakdown voltage
I
(BR)
= 100
μ
A
Forward voltage
I
F
= 1 mA
I
F
= 100 mA
V
(BR)
70
nA
Reverse current
V
R
= 50 V
I
R
100
AC characteristics
ns
Reverse recovery time
I
F
= 10 mA,
I
R
= 10 mA,
R
L
= 100
measured at
I
R
= 1 mA
t
rr
15
mV
V
F
550
850
700
1100
pF
Diode capacitance
V
R
= 0,
f
= 1 MHz
C
D
2.5
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