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參數(shù)資料
| 型號： | SMBJ33-HE3/5B |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | TVS二極管 - 瞬態(tài)電壓抑制 |
| 英文描述： | 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA |
| 封裝： | ROHS COMPLIANT, PLASTIC, SMBJ, 2 PIN |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 107K |
| 代理商： | SMBJ33-HE3/5B |
Vishay General Semiconductor
SMBJ5.0 thru SMBJ188CA
Document Number 88392
08-Sep-06
www.vishay.com
1
Surface Mount TRANSZORB Transient Voltage Suppressors
FEATURES
Low profile package
Ideal for automated placement
Glass passivated chip junction
Available in Unidirectional and Bidirectional
600 W peak pulse power capability with a
10/1000 s waveform, repetitive rate (duty cycle):
0.01 %
Excellent clamping capability
Very fast response time
Low incremental surge resistance
Meets MSL level 1, per J-STD-020C, LF max peak
of 260 °C
Solder Dip 260 °C, 40 seconds
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and
lighting on ICs, MOSFET, signal lines of sensor units
for consumer, computer, industrial, automotive and
telecommunication.
MECHANICAL DATA
Case: DO-214AA (SMBJ)
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade, HE3 suffix for high
reliability grade (AEC Q101 qualified)
Polarity: For unidirectional types the band denotes
cathode end, no marking on bidirectional types
DO-214AA (SMB J-Bend)
DEVICES FOR BIDIRECTION APPLICATIONS
For
bidirectional
devices
use
C
or
CA
suffix
(e.g. SMBJ10CA).
Electrical characteristics apply in both directions.
MAJOR RATINGS AND CHARACTERISTICS
VWM
5.0 V to 188 V
PPPM
600 W
IFSM (Unidirectional only)
100 A
Tj max.
150 °C
Note:
(1) Non-repetitive current pulse, per Fig. 3 and derated above TA = 25 °C per Fig. 2
(2) Mounted on 0.2 x 0.2" (5.0 x 5.0 mm) copper pads to each terminal
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VALUE
UNIT
Peak pulse power dissipation with a 10/1000 s waveform (1,2) (see Fig. 1)
PPPM
Minimum 600
W
Peak pulse current with a 10/1000 s waveform (1)
IPPM
see next table
A
Peak forward surge current 8.3 ms single half sine-wave uni-directional only (2)
IFSM
100
A
Operating junction and storage temperature range
TJ, TSTG
- 55 to + 150
°C
相關PDF資料 |
PDF描述 |
|---|---|
| SMBJ33CA-HE3/5B | 600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA |
| SMBJ36CA-HE3/52 | 600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA |
| SMBJ36CA-HE3/5B | 600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA |
| SMBJ40A-HE3/5B | 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA |
| SMBJ40C-HE3/52 | 600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| SMBJ350 | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 350Vr 600W 1.1A 10% UniDirectional RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| SMBJ350A | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 350Vr 600W 1.1A 5% UniDirectional RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| SMBJ350A-13-F | 功能描述:MOSFET Transient Voltage Su SMB T&R 3K RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SMBJ350AE3/TR13 | 制造商:Microsemi Corporation 功能描述:600W, STAND-OFF VOLTAGE = 350V, ? 5%, UNI-DIR - Tape and Reel 制造商:Microsemi Corporation 功能描述:TVS 600W 350V 5% UNIDIR SMBJ |
| SMBJ350C | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 350Vr 600W 1.1A 10% BiDirectional RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
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