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參數資料
| 型號： | SMBJ33CP |
| 廠商： | MICRO COMMERCIAL COMPONENTS |
| 元件分類： | TVS二極管 - 瞬態(tài)電壓抑制 |
| 英文描述： | 600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA |
| 封裝： | SMBJ, 2 PIN |
| 文件頁數： | 1/8頁 |
| 文件大小： | 0K |
| 代理商： | SMBJ33CP |
Features
l For surface mount applicationsin order to optimize
boar d space
l Low profile package
l Fast response time: typical less than 1.0ps from 0 volts to
VBR minimum
l Low inductance
Mechanical Data
l
CASE: JEDEC DO-214AA
l
Terminals: solderable per MIL-STD-750, Method 2026
l
Polarity: Color band denotespositive end (cathode)
except Bidirectional
l
Maximum soldering temperature: 260
oC for 10 seconds
Maximum Ratings @ 25oC Unless Otherwise Specified
Peak Pulse Current on
10/1000us waveform
IPP
See Table 1 Note: 1
Peak Pulse Power
Dissipation
PPP
600W
Note: 1,
2
Peak Forward Surge
Current
IFSM)
100A
Note: 2
Operation And Storage
Temperature Range
TJ, TSTG
-55
oC to
+150
oC
Thermal Resistance
R
25
oC/W
NOTES:
1. Non-repetitive current pulse, per Fig.3 and derated above
TA=25
oC per Fig.2.
2. Mounted on 5.0mm
2 copper pads to each terminal.
3. 8.3ms, single half sine wave duty cycle=4 pulses per. Minute
maximum.
SMBJ5.0
THRU
SMBJ440CA
Transient
Voltage Suppressor
5.0 to 440 Volts
600 Watt
www.mccsemi.com
4. Peak pulse current waveform is 10/1000us, with maximum duty
Cycle of 0.01%.
3
DO-214AA
(SMB) (LEAD FRAME)
0.050”
0.106"
0.082”
SUGGESTED SOLDER
PAD LAYOUT
DIMENSIONS
INCHES
MM
DIM
MIN
MAX
MIN
MAX
NOTE
A
.083
.096
2.13
2.44
B
.075
.083
1.91
2.11
C
.002
.008
0.051
0.203
D
.006-
.012
0.152
0.305
E
.030
.050
0.76
1.27
F
.200
.220
5.08
5.59
G
.160
.185
4.06
4.70
H
.130
.155
3.30
3.94
G
H
E
D
F
A
B
C
omponents
20736 Marilla Street Chatsworth
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MCC
Revision: 5
2005/05/19
l UL Recognized File # E222849
TM
Micro Commercial Components
相關PDF資料 |
PDF描述 |
|---|---|
| SMBJ7.0CP | 600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA |
| SMBJ200CAP | 600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA |
| SMBJ220CAP | 600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA |
| SMBJ220AP | 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA |
| SMBJ150CP | 600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA |
相關代理商/技術參數 |
參數描述 |
|---|---|
| SMBJ33E3 | 制造商:Microsemi Corporation 功能描述:TVS SGL UNI-DIR 33V 600W 2PIN DO-214AA - Bulk |
| SMBJ33-E3/1 | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 600W 33V 10% Unidir RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| SMBJ33-E3/2C | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 600W 33V 10% Uni RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| SMBJ33-E3/51 | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 600W 33V 10% Uni RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| SMBJ33-E3/52 | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 600W 33V 10% Uni RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
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